Comparison of the chemical diffusion of undoped and Nb-doped SrTiO3

Pasierb, P.; Komornicki, S.; Rękas, M.

doi:10.1016/s0022-3697(99)00193-6

Cited by 73 publications

(64 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…As seen in Figure 5a, in diffusing from one vacancy site to the other along the [010] direction in the channel, O 2-crosses an intermediate saddle point, H saddle , which is the point of highest energy in the system. [13] This results in E a being composed of the difference between H saddle and H i . While H saddle only slightly lowers with tensile strain, H i significantly increases with tensile strain due to changes in the stabilizing effects of hybridization between Co 3d and O 2p, which are dependent on the Co-O bond length [20] .…”

Section: Strain Control Of Oxygen Activation Energy and Formation Entmentioning

confidence: 99%

See 1 more Smart Citation

Strain Control of Oxygen Vacancies in Epitaxial Strontium Cobaltite Films

Petrie

Mitra

Jeen

et al. 2016

Adv Funct Materials

213

160

View full text Add to dashboard Cite

The ability to manipulate oxygen anion defects rather than metal cations in complex oxides is facilitating new functionalities critical for emerging energy and device technologies.However, the difficulty in activating oxygen at reduced temperatures hinders the deliberate control of an important defect, oxygen vacancies. Here, strontium cobaltite (SrCoO x ) is used to demonstrate that epitaxial strain is a powerful tool for manipulating the oxygen vacancy concentration even under highly oxidizing environments and at annealing temperatures as low as 300 °C. By applying a small biaxial tensile strain (2%), the oxygen activation energy barrier decreases by ~30%, resulting in a tunable oxygen deficient steady-state under conditions that would normally fully oxidize unstrained cobaltite. These strain-induced changes in oxygen stoichiometry drive the cobaltite from a ferromagnetic metal towards an antiferromagnetic insulator. The ability to decouple the oxygen vacancy concentration from its typical dependence on the operational environment is useful for effectively designing oxides materials with a specific oxygen stoichiometry.2

show abstract

Section: Strain Control Of Oxygen Activation Energy and Formation Entmentioning

confidence: 99%

“…[13,14] To tailor the content of oxygen vacancies to the increasing number of novel applications that utilize these functional defects, a new method of controlling the oxygen defect concentration is required.…”

Section: Introductionmentioning

confidence: 99%

Strain Control of Oxygen Vacancies in Epitaxial Strontium Cobaltite Films

Petrie

Mitra

Jeen

et al. 2016

Adv Funct Materials

213

160

View full text Add to dashboard Cite

show abstract

“…The formation of oxygen vacancies in SrTiO 3 have been studied previously using theoretical as well as experimental techniques. [43][44][45][46] In laboratory experiments, oxygen vacancies can be introduced in a SrTiO 3 sample by varying the external oxygen partial pressure and temperature or via various processes such as growth, annealing, and redox reactions. In our simulation setup, an oxygen vacancy formed by removing an oxygen atom from the defect free neutral cell results in an inward movement of the nearest neighbor (NN) anions and cations.…”

Section: A Oxygen Vacancymentioning

confidence: 99%

“…43,44,46 Recent anelastic relaxation measurements on SrTiO 3 crystal report a barrier of 0.60 eV for hopping of isolated vacancies. 44 For an oxygen vacancy in a neutral cell we find diffusion along 110 direction has the lowest energy barrier.…”

Section: A Oxygen Vacancymentioning

confidence: 99%

Method for defect stability diagram fromab initiocalculations: A case study of SrTiO3

2012

View full text Add to dashboard Cite

Point defects play a dominant role in determining the wide spectrum of electronic and physical properties of semiconducting materials that have vast technological applications. Using ab-initio simulations, a method to calculate equilibrium defect concentrations, Fermi energy and defect stability diagrams as functions of external parameters, such as temperature and pressure, is presented. Using SrTiO3 as a representative material, we report our analysis of the stability of oxygen vacancies and interstitials, in their different charge states, as a function of temperature, oxygen partial pressure and Fermi energy of the system. Further, by analyzing the defect chemistry at experimentally relevant temperatures, we find that at low oxygen partial pressure, neutral oxygen vacancies are most dominant and at intermediate and high oxygen partial pressure, doubly charged oxygen vacancies defects are dominant.

show abstract

“…It is known that oxygen vacancies remain double ionized in quenched samples after annealing under vacuum, therefore, two free-electrons became available for each oxygen removed from the crystal lattice after the reduction process 16 . Several authors have studied the vacancy doping of SrTiO 3 in form of single crystals, thin films or ceramics [17][18][19][20] . Some of these authors have shown chemical diffusion coefficients for the SrTiO 3 crystal lattice using the Neumann solution of the Fick's second law carried out by in situ transient electrical resistivity measurements [18][19][20] .…”

Section: Introductionmentioning

confidence: 99%

Kinetics of Vacancy Doping in SrTiO3 Studied by in situ Electrical Resistivity

et al. 2018

View full text Add to dashboard Cite

The kinetics of annealing to transform stoichiometric SrTiO 3 insulator into a vacancy-doped semiconductor-superconductor was revisited by in situ electrical resistivity measurements. SrTiO 3 single crystals were grown by Floating Zone Method. Using a homemade apparatus several electrical resistivity as a function of time were measured at different temperatures, which allows one to study the creation of vacancies during annealing under vacuum. The activation energy for the oxygen vacancies formation/charge doping in SrTiO 3 was estimated as 1.4±0.3 eV using solid-state kinetics approach.

show abstract

Comparison of the chemical diffusion of undoped and Nb-doped SrTiO3

Cited by 73 publications

References 26 publications

Strain Control of Oxygen Vacancies in Epitaxial Strontium Cobaltite Films

Strain Control of Oxygen Vacancies in Epitaxial Strontium Cobaltite Films

Method for defect stability diagram fromab initiocalculations: A case study of SrTiO3

Kinetics of Vacancy Doping in SrTiO3 Studied by in situ Electrical Resistivity

Contact Info

Product

Resources

About