Comparison of superlattice based dual color nBn and pBp infrared detectors

Myers, Stephen; Plis, E.; Morath, Christian P.; Cowan, Vincent M.; Gautam, Nutan; Klein, Brianna; Kutty, M. N.; Schuler-Sandy, Ted; Naydenkov, Mikhail; Krishna, S.

doi:10.1117/12.894986

Cited by 12 publications

(5 citation statements)

References 1 publication

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“…Generally, a spectral crosstalk [(A) in Fig. 5(a)], which is caused by absorbing MWIR band of the LWIR device, is a key issue in dual-band MWIR/LWIR detectors [9][10][11]. The spectral crosstalk in Fig.…”

Section: Characteristics Of Dual-band Mwir/lwir Devicementioning

confidence: 99%

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Design and performance of dual-band MWIR/LWIR focal plane arrays based on a type-II superlattice nBn structure

2024

Opto-Electronics Review

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Dual-band infrared detector, which acquires more image information than single-band detectors, has excellent detection, recognition, and identification capabilities. The dual-band detector can have two bumps to connect with each absorber layer, but it is difficult to implement small pitch focal plane arrays and its fabrication process is complicated. Therefore, the most effective way for a dual-band detector is to acquire each band by biasselectable with one bump. To aim this, a dual-band MWIR/LWIR detector based on an InAs/GaSb type-II superlattice nBn structure was designed and its performance was evaluated in this work. Since two absorber layers were separated by the barrier layer, each band can be detected by bias-selectable with one bump. The fabricated dual-band device exhibited the dark current and spectral response characteristics of MWIR and LWIR bands under negative and positive bias, respectively. Spectral crosstalk that is a major issue in dualband detectors was also improved. Finally, a 20 m pitch 640  512 dual-band detector was fabricated, and both MWIR and LWIR images exhibited an average noise equivalent temperature difference of 30 mK or less at 80 K.

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Section: Characteristics Of Dual-band Mwir/lwir Devicementioning

confidence: 99%

“…However, it can be difficult to fabricate small pitch and large format FPAs. Another way is to use a unipolar barrier structure [9][10][11]. The dual-band detector with a unipolar barrier structure acquires each band by sequentially selecting the applied bias with only one electrode (bump).…”

Section: Introductionmentioning

confidence: 99%

Design and performance of dual-band MWIR/LWIR focal plane arrays based on a type-II superlattice nBn structure

2024

Opto-Electronics Review

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“…The pBp architecture may be considered the inverse of the nBn structure, the main distinctions being that the minority carriers for nBn are holes while those for pBp are electrons, and the barriers each differ in height relative to the valence and conduction bands [83]. These structures likewise belong to the unipolar barrier category, which basically describes the inclusion of a single barrier that blocks one carrier type (electron or hole) but allows for the other to flow unimpededly [79].…”

Section: Buried Junctionmentioning

confidence: 99%

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Sood¹,

Zeller²,

Welser³

et al. 2018

Two-Dimensional Materials for Photodetector

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The implementation of strained layer superlattices (SLS) for detection of infrared (IR) radiation has enabled compact, high performance IR detectors and two-dimensional focal plane arrays (FPAs). Since initially proposed three decades ago, SLS detectors exploiting type II band structures existing in the InAs/GaSb material system have become integral components in high resolution thermal detection and imaging systems. The extensive technological progress occurring in this area is attributed in part to the band structure flexibility offered by the nearly lattice-matched InAs/AlSb/Ga(In)Sb material system, enabling the operating IR wavelength range to be tailored through adjustment of the constituent strained layer compositions and/or thicknesses. This has led to the development of many advanced type II SLS device concepts and architectures for low-noise detectors and FPAs operating from the short-wavelength infrared (SWIR) to very long-wavelength infrared (VLWIR) bands. These include double heterostructures and unipolar-barrier structures such as graded-gap M-, W-, and N-structures, nBn, pMp, and pBn detectors, and complementary barrier infrared detector (CBIRD) and pBiBn designs. These diverse type II SLS detector architectures have provided researchers with expanded capabilities to optimize detector and FPA performance to further benefit a broad range of electrooptical/IR applications.

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“…The nBn structure based on T2SL effectively reduces the dark current, which improves the performance of the device. Moereover, the nBn structure is suitable for implementing dual-band detector in a single pixel because each band can be detected by bias-switching (positive or negative) due to a barrier inserted between each absorber layer [9,10,11]. i3system, which has studied T2SL-based nBn detectors since 2018, has manufactured high-performance MWIR high-operating temperature (HOT) and cooled LWIR detectors since last year [12].…”

Section: Introductionmentioning

confidence: 99%

640 x 512 dual-band midwave and longwave infrared focal plane array at i3system

Lee

Eom

Kang

et al. 2023

Infrared Technology and Applications XLIX

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Each MWIR and LWIR detectror, which is widely used in various civil and military including chemical identification, atmospheric monitoring, guided weapon and surveillance reconnaissance systems, is advantageous for detecting hot and cool targets, respectively. Dual-band or multi-band detector that is able to detect more than two bands with only single detector has excellent recognition and identification capablities. Therefore, various groups have studied dual-band or multi-band detector since 1998. In this work, a 20 μm 640×512 dual-band midwave and longwave infrared detector with nBn structure was studied. A nBn detector is not only effective in reducing dark current, but it is relatively simple to implement a dual-band detector by growing MWIR and LWIR absorber layers on both sides of a barrier layer. The dual-band detector acquires each MWIR and LWIR bands by selecting the applied bias direction. Consequently, the 20 μm 640×512 dual-band MWIR/LWIR FPA hybridized to read-out integrated circuit (ROIC) exhibited that an average noise equivalent temperature difference (NETD) and operability of both MWIR and LWIR modes were less than 25 mK and more than 99.5 %, respectively.

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Comparison of superlattice based dual color nBn and pBp infrared detectors

Cited by 12 publications

References 1 publication

Design and performance of dual-band MWIR/LWIR focal plane arrays based on a type-II superlattice nBn structure

Design and performance of dual-band MWIR/LWIR focal plane arrays based on a type-II superlattice nBn structure

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

640 x 512 dual-band midwave and longwave infrared focal plane array at i3system

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