Comparison of strain relaxation in InGaAsN and InGaAs thin films

Adamcyk, M.; Schmid, Jens H.; Tiedje, T.; Koveshnikov, Alexey; Chahboun, A.; Fink, V.; Kavanagh, K. L.

doi:10.1063/1.1485124

Cited by 25 publications

(10 citation statements)

References 10 publications

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“…[12][13][14] The morphology at various points of the strain evolution was also examined. The induced strain thus calculated is th = 0.26 ϫ 10 −3 , which corresponds to an induced tensile stress th = 0.03 GPa, and is in reasonable agreement with the measured stress.…”

Section: Resultsmentioning

confidence: 99%

Dislocation dynamics in strain relaxation in GaAsSb∕GaAs heteroepitaxy

Rodriguez

Millunchick

2006

Journal of Applied Physics

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Articles you may be interested inInvestigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy Appl. Phys. Lett.Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial films grown on Si as revealed by highangle annular dark-field scanning transmission electron microscopy Appl. Phys. Lett. 98, 082113 (2011);The real-time stress evolution has been investigated during molecular-beam epitaxial growth of GaAs 1−x Sb x / GaAs metamorphic buffer. These real-time data were obtained using an in situ multibeam optical sensor measurement and has been combined with detailed analysis of data obtained from x-ray diffraction, transmission electron microscopy, and atomic force microscopy. We compare the strain relaxation of two different compositions of GaAs 1−x Sb x , and correlated the development of dislocation structure and morphology. Several distinct stages of the strain relaxation were observed during growth, which can be separated in three main regimes: pseudomorphic growth, fast strain relaxation, and saturation. Transmission electron microscopy data show that GaAs 0.5 Sb 0.5 buffer layers have a larger fraction of pure-edge dislocations that arise during the earliest stages of growth. This could have a significant influence in the fabrication of buffer layers, since pure edges are favored over the threading dislocations. The strain relaxation profile for each film was modeled using a modified model of Dodson and Tsao ͓Phys. Rev. B 38, 12383 ͑1988͔͒ that takes into account the elastic interactions of misfit dislocations. The model results agree with the experimental data and show that interaction of misfit dislocations is responsible for the large residual stress. In addition, following the description developed by Dodson and Tsao ͓Phys. Rev. B 38, 12383 ͑1988͔͒ for the rate of dislocation multiplication, we were able to determine the line density of threading dislocations from the experimental data. This has a potential application in the design of metamorphic buffer layers because our observations are made in real time on individual growth, without the need of external characterization to measure the dislocation density.

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Section: Resultsmentioning

confidence: 99%

Dislocation dynamics in strain relaxation in GaAsSb∕GaAs heteroepitaxy

Rodriguez

Millunchick

2006

Journal of Applied Physics

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“…4 The epitaxial growth of dilute nitride layers, such as GaAsN and GaPN, is particularly challenging under conditions of lattice mismatch since these alloys show plastic properties which are drastically different from those of conventional ternary alloys such as GaAsP or GaInAs. [5][6][7][8] Consequently, the strain relaxation is not well described by equilibrium models, such as the classical Matthews and Blakeslee model, 9 and high-quality strain-relaxed layers are difficult to obtain. [5][6][7][8] Consequently, the strain relaxation is not well described by equilibrium models, such as the classical Matthews and Blakeslee model, 9 and high-quality strain-relaxed layers are difficult to obtain.…”

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confidence: 92%

“…5 It has been shown that already small concentrations of nitrogen may lead to considerable alloy hardening making the formation and glide of dislocations difficult. 7,8,10,11 While the effect of hardening of dilute nitrides has mainly been recognized as a problem, we show that this phenomenon can actually be used as a tool for controlling defect formation and strain relaxation in lattice mismatched heteroepitaxy. 7,8,10,11 While the effect of hardening of dilute nitrides has mainly been recognized as a problem, we show that this phenomenon can actually be used as a tool for controlling defect formation and strain relaxation in lattice mismatched heteroepitaxy.…”

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confidence: 99%

Misfit dislocation blocking by dilute nitride intermediate layers

Schöne

Spiecker

Dimroth

et al. 2008

Applied Physics Letters

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Defect formation and strain relaxation in step-graded GaAs 1−x N x and GaAs 1−y P y buffer structures grown by metal-organic vapor phase epitaxy on GaAs͑001͒ substrates have been investigated by transmission electron microscopy and high-resolution x-ray diffractometry. From the comparison of different buffer concepts, it is shown that, by introducing intermediate GaAs 1−x N x layers with N concentrations x ജ 2% into a GaAs 1−x P x buffer structure, dislocation formation and strain relaxation are effectively suppressed during subsequent growth of layers with tensile strains. It is argued that a similar concept, however, modified by using layers of differing alloy composition, can be used for layer systems with compressive strains. Appropriately alloyed intermediate dilute nitride layers appear to offer a powerful concept for engineering defect distributions and layer strain in semiconductor technology.

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“…Grazing-incidence X-ray diffraction (GIXD) is a powerful method of measuring strain and delineating interface structures in a variety of sample systems, such as quantum dots, quantum wires, nano-particles, thin-films, and multi-layer superlattices [1][2][3][4][5][6][7][8][9][10][11][12][13]. However, grazing-incidence X-rays penetrate only several hundred angstroms into the sample due to total reflection effect.…”

Section: Introductionmentioning

confidence: 99%