Comparison of SiC Synchronous Rectification and Schottky Diode in Voltage Source Inverters

Zhou, Cheng; Li, Zongjian; Yuan, Fanxin; Jiang, Xi; He, Zhiyuan; Shen, Z. John; Wang, Daming

doi:10.1109/ecce.2018.8557879

Cited by 9 publications

(3 citation statements)

References 11 publications

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“…In addition, when Si IGBT turns off before SiC MOSFET with appropriate turn off delay time, Si IGBT can realize zero-voltage turn off so as to minimize the turn off loss of hybrid switch [10], [11]. By optimizing the gate control pattern, the hybrid switch can achieve the switching characteristics close to SiC MOSFET while improving the device current level [12][13][14], and greatly reduce the cost compared with the all-SiC scheme [15][16][17]. At present, researchers have carried out research on the characteristics, loss modeling, and control modes of SiC/Si hybrid switch.…”

Section: Introductionmentioning

confidence: 99%

Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid Switch

Qin

Xie

et al. 2023

IEEE Access

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SiC MOSFET/Si IGBT (SiC/Si) hybrid switch usually selects the gate control pattern that SiC MOSFET turns on earlier and turns off later than Si IGBT, with the aim of making the hybrid switch show excellent switching characteristics of SiC MOSFET and reduce switching loss. However, when SiC MOSFET turns off, the fast slew rate of drain source voltage causes the current spike in Si IGBT due to the effects of parasitic capacitance charging and carrier recombination, which will produce additional turn-off loss, thus affecting the overall efficiency and temperature rise of the converter. Based on the double pulse test circuit of SiC/Si hybrid switch, the mathematical model of the turn-off transient process is established. The effects of the remnant carrier recombination degree of Si IGBT, the turn-off speed of SiC MOSFET and the working conditions on the turn-off current spike of hybrid switch are evaluated. Although adjusting these parameters can reduce the turn-off current spike somewhat, additional losses will be introduced. Therefore, a new method to suppress the turn-off current spike is proposed to balance the power loss and current stress.INDEX TERMS SiC MOSFET/Si IGBT, hybrid switch, current spike, suppression method

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Section: Introductionmentioning

confidence: 99%

Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid Switch

Qin

Xie

et al. 2023

IEEE Access

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“…Nowadays, the SiC MOSFET has received extensive attention for its excellent performance in the switching speed, the switching frequency, the rated voltage value, the on-resistance, the radiation resistance, the temperature resistance and other aspects [1][2][3][4][5]. The application of the SiC MOSFET in the converter can effectively improve the system efficiency and promote the system upgrading [6][7][8][9][10]. However, the SiC MOSFET also faces several crucial problems.…”

Section: Introductionmentioning

confidence: 99%

The Method of the SiC MOSFET Replacing the Si IGBT in the Traditional Power Electronics Converter without Redesigning the Main Circuit and the Driver Circuit

Zhang¹,

Yang²,

Ren³

et al. 2021

Energy Engineering

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As a wide bandgap power electronics device, the SiC MOSFET has a lot of advantages over the traditional Si IGBT. Replacing the Si IGBT with the SiC MOSFET in the existing power electronics converter is an effective means to improve the performance and promote the upgrading of the traditional converter. Generally, in order to make full use of its advantages of the SiC MOSFET, the Si IGBT in the traditional power electronics circuit cannot be simply replaced by the SiC MOSFET, but the main circuit and the driver circuit need to be redesigned because the oscillation problem and the cross-talk problem caused by the parasitic parameter are very serious when the SiC MOSFET switches. However, considering the low cost and the short cycle requirement of the equipment development, it is often difficult to redesign the circuit hardware structure of all converters. In order to resolve this contradiction, a ferrite bead based method is proposed in this paper. Through this method, without redesigning the hardware structure of the main circuit and the driver circuit, the SiC MOSFET can be used to replace the Si-based power electronics device directly, and the loss of the converter can be reduced with small oscillation. Finally, the effectiveness of the proposed method is proved by experiments.

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“…However, their significantly higher cost/ampere ($/A) are the major roadblocks for the SiC MOSFET's widespread employment in the commercial mainstream power electronics systems [5][6]. In recent years, the Si/SiC hybrid switch of paralleling a high current Si IGBT and a low current SiC MOSFET was reported to achieve an improved cost/performance tradeoff [7][8][9], which is a promising solution to address the high cost issue of SiC devices [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Active Gate Delay Time Control of Si/SiC Hybrid Switch for Junction Temperature Balance Over a Wide Power Range

Wang

Deng

et al. 2020

IEEE Trans. Power Electron.

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Comparison of SiC Synchronous Rectification and Schottky Diode in Voltage Source Inverters

Cited by 9 publications

References 11 publications

Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid Switch

Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid Switch

The Method of the SiC MOSFET Replacing the Si IGBT in the Traditional Power Electronics Converter without Redesigning the Main Circuit and the Driver Circuit

Active Gate Delay Time Control of Si/SiC Hybrid Switch for Junction Temperature Balance Over a Wide Power Range

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