2020
DOI: 10.1109/tuffc.2019.2950902
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Comparison of Si3N4–SiO2 and SiO2 Insulation Layer for Zero-Bias CMUT Operation Using Dielectric Charging Effects

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Cited by 8 publications
(7 citation statements)
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“…The same parameters were used for all four devices to compare their charging capabilities. Other groups that investigated pre-charged CMUTs, charged their devices with voltages between 1.5 to 2.5 times the pull-in voltage [15]- [19], mostly resulting, except for one case [17], in out of collapse pre-charged CMUTs. In this work, the amplitude of the DC charging voltage was chosen to be about three times higher than the analytically calculated pull-in voltage out of the four devices, in order to initiate charge trapping in a deep collapsed state.…”
Section: Pre-charging the Cmutsmentioning
confidence: 99%
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“…The same parameters were used for all four devices to compare their charging capabilities. Other groups that investigated pre-charged CMUTs, charged their devices with voltages between 1.5 to 2.5 times the pull-in voltage [15]- [19], mostly resulting, except for one case [17], in out of collapse pre-charged CMUTs. In this work, the amplitude of the DC charging voltage was chosen to be about three times higher than the analytically calculated pull-in voltage out of the four devices, in order to initiate charge trapping in a deep collapsed state.…”
Section: Pre-charging the Cmutsmentioning
confidence: 99%
“…Dielectric charging is usually seen as a reliability issue in MEMS devices since it causes instability of the device characteristics up to the point at which the device fails [9]- [11]. On the other hand, the concept of dielectric charging is at the base of the semiconductor memory industry [12]- [14], and other groups have already experimentally applied it to CMUT devices to achieve reduced or zero-bias operation [15]- [19]. High-k materials such as Si 3 N 4 or HfO 2 could be used for this application [20], as investigated by Park et al [18] and Choi et al [15], who demonstrated the feasibility of pre-charged CMUTs with Si 3 N 4 as dielectric showing good charge retention over time, even at high temperatures.…”
Section: Introductionmentioning
confidence: 99%
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“…On the one hand, the insulating layer can prevent the membrane from collapsing or the cavity is broken down and the upper and lower electrodes contact and cause a short circuit. On the other hand, it can be used as a stop layer for sacrificial layer etching to protect the device from damage [20,21]. The sealed vacuum cavity is selected to prevent the CMUT element from being interfered by the external environment, causing energy loss and affecting the normal operation of the device.…”
Section: Cmut Basic Structure and Its Main Parametersmentioning
confidence: 99%
“…Recently, other groups have performed long-term measurements of pre-charged CMUTs. However, their research aimed to study the stability of the trapped charges in the dielectric rather than estimating the duration of the charge retention [15,16].…”
Section: Introductionmentioning
confidence: 99%