Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HF

Higashi, G. S.; Becker, R. S.; Chabal, Yves J.; Becker, A. J.

doi:10.1063/1.105155

Cited by 496 publications

(217 citation statements)

References 18 publications

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“…1). [75][76][77][78] Hydrogenated silicon surfaces are attractive to work with because of their ease of preparation, 78 their relative stability in air 79,80 and during brief water ring procedures, 31,76 and their lack of appreciable reactivity toward a range of common solvents (including acetonitrile, 81 diethyl ether, 46 chlorobenzene, 82 hexane, 83 toluene 84 and mesitylene 85,86 preparation of covalent organic layers by wet chemical methods. 87 Notable exceptions to the typically straightforward conditions are [2+2] and [4+2] cycloaddition reactions under 'dry' UHV conditions.…”

Section: Surface Preparationmentioning

confidence: 99%

Wet chemical routes to the assembly of organic monolayers on silicon surfaces via the formation of Si–C bonds: surface preparation, passivation and functionalization

2010

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Section: Surface Preparationmentioning

confidence: 99%

Wet chemical routes to the assembly of organic monolayers on silicon surfaces via the formation of Si–C bonds: surface preparation, passivation and functionalization

2010

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“…The samples were then etched in 40% NH 4 F ͑aq͒ to yield H-terminated Si surfaces. 16 Following the etch, no signals for elements other than silicon and ͑adventitious͒ carbonaceous material were observed in the wide scan of an x-ray photoelectron ͑XP͒ spectrum, and no oxide was detectable in the Si 2p region. The H-terminated Si samples were then chlorinated using PCl 5 in chlorobenzene, and were subsequently treated with either CH 3 MgBr ͑to obtain methylated surfaces͒ or with C 8 H 17 MgBr ͑to obtain octylated surfaces͒, as described previously.…”

Section: ͓S0003-6951͑00͒01739-3͔mentioning

confidence: 99%

Preparation of air-stable, low recombination velocity Si(111) surfaces through alkyl termination

Royea

Juang

Lewis

2000

Applied Physics Letters

206

315

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A two-step, chlorination/alkylation procedure has been used to convert the surface Si-H bonds on NH 4 F ͑aq͒ -etched ͑111͒-oriented Si wafers into Si-alkyl bonds of the form Si-C n H 2nϩ1 (nу1). The electrical properties of such functionalized surfaces were investigated under high-level and low-level injection conditions using a contactless rf apparatus. The charge carrier recombination velocities of the alkylated surfaces were Ͻ25 cm s Ϫ1 under high-level and low-level injection conditions, implying residual surface trap densities of Ͻ3ϫ10 9 cm Ϫ2 . Although the carrier recombination velocity of hydrogen-terminated Si͑111͒ surfaces in contact with aqueous acids is Ͻ20 cm s Ϫ1 , this surface deteriorates within 30 min in an air ambient, yielding a high surface recombination velocity. In contrast, methylated Si͑111͒ surfaces exhibit low surface recombination velocities in air for more than 4 weeks. Low surface recombination velocities were also observed for Si surfaces that had been modified with longer alkyl chains.

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“…3.1. The hydrogen-terminated surface is able to inhibit oxide growth for up to 20 minutes after etching in atmosphere [82,83].…”

Section: Substrate Preparationmentioning

confidence: 99%

Nanoscale Schottky barrier visualization utilizing computational modeling and ballistic electron emission microscopy

Nolting

Durcan

Gassner

et al. 2018

Journal of Applied Physics

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The electrostatic barrier at a metal semiconductor interface is visualized using nanoscale spatial and meV energetic resolution. A combination of Schottky barrier mapping with ballistic electron emission microscopy and computational modeling enables extraction of the barrier heights, the hot electron scattering, and the presence of localized charges at the interface from the histograms of the spectra thresholds. Several metal semiconductor interfaces are investigated including W/Si(001) using two different deposition techniques, Cr/Si(001), and mixed Au-Ag/Si(001). The findings demonstrate the ability to detect the effects of partial silicide formation in the W and Cr samples and the presence of two barrier heights in intermixed Au/Ag films upon the electrostatic barrier of a buried interface with nanoscale resolution. This has potential to transform the fundamental understanding of the relationship between electrostatic uniformity and interface structure for technologically important metal semiconductor interfaces.

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Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HF

Cited by 496 publications

References 18 publications

Wet chemical routes to the assembly of organic monolayers on silicon surfaces via the formation of Si–C bonds: surface preparation, passivation and functionalization

Wet chemical routes to the assembly of organic monolayers on silicon surfaces via the formation of Si–C bonds: surface preparation, passivation and functionalization

Preparation of air-stable, low recombination velocity Si(111) surfaces through alkyl termination

Nanoscale Schottky barrier visualization utilizing computational modeling and ballistic electron emission microscopy

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