Comparison of RSG-MOSFET and capacitive MEMS resonator detection

Abelé, N.; Pott, V.; Boucart, K.; Casset, F.; Segueni, K.; Ancey, P.; Ionescu, Adrian M.

doi:10.1049/el:20047409

Cited by 28 publications

(19 citation statements)

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“…Thus, as the top plate deflects vertically, that is as increases, the capacitance increases according to (2) If is increased to more than , the equilibrium is broken because of the overwhelming electrostatic force, resulting in the snap of the two plates, the theoretical pull-in voltage being (3) II. MOSFETS WITH A NEMS-GATE MOS-NEMS devices combine a MOS transistor and a metal membrane suspended over its channel.…”

Section: B Nems-gate Devices Principlementioning

confidence: 99%

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3-D Design and Analysis of Functional NEMS-gate MOSFETs and SETs

Pruvost

Mizuta

Oda

2007

IEEE Trans. Nanotechnology

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Section: B Nems-gate Devices Principlementioning

confidence: 99%

“…Digital Object Identifier 10.1109/TNANO.2007.891825 analytical modeling [1], [2], and a very recent report experimentally demonstrated its virtues [3]. Another recent report also proposed a design combining a nanoscale movable gate and a transistor, which could lower the threshold voltage and enhance the drive current [4].…”

mentioning

confidence: 99%

3-D Design and Analysis of Functional NEMS-gate MOSFETs and SETs

Pruvost

Mizuta

Oda

2007

IEEE Trans. Nanotechnology

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“…It should be noted that the upper and lower cavity dimensions were optimized carefully so that the floating gate does contact either the gate or the substrate. In our device structure, however, switching of the floating gate is controlled via the electrostatic interaction between the gate electrode and the charge stored in the floating gate, and therefore, the pull-in phenomenon is less likely to occur, which is common for conventional suspended metal gate structures [6], [7]. For further reducing V S down to those for FeRAMs and PCRAMs (typically 3-5 V), we should also optimize the structural and material parameters of the outer cavity such as the upper and lower cavity dimensions, thickness of the side walls as well as the choice of material for them.…”

Section: B Structural Optimization For Improving On/off Rangementioning

confidence: 99%

“…Since the operation speed of the NEMS increases primarily in inverse proportion to the square of the beam length, the extremely fast NEMS with the switching time close to the electronic devices may be realized by reducing their dimensions even smaller. It may therefore be worthwhile to consider integrating the NEMS components into conventional Si devices for adding new functionality [6], [7].…”

mentioning

confidence: 99%

Three-Dimensional Numerical Analysis of Switching Properties of High-Speed and Nonvolatile Nanoelectromechanical Memory

Nagami

Mizuta

Momo

et al. 2007

IEEE Trans. Electron Devices

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, where L, T , and Z 0 represent the length, thickness, and equilibrium displacement of the buckled floating gate, respectively. We demonstrate that the switching frequency can be increased while maintaining the switching force when we downscale all the floating gate dimensions proportionally along with the scaling law. We also show that the switching voltage can be reduced down to less than 15 V while maintaining the ON/OFF operation range of the sense MOSFET by optimizing the cavity structure which sustains the inside buckled floating gate.

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“…The action of a NEMFET is significantly different from that of an electrostatically driven CMOS, and needs new physics-based predictive models. A number of empirical models have already been proposed based on 1D electrostatics [40,70] and non-linear oscillator equations [71,72,73]. To improve understanding of the efficient switching characteristics, pull-in instability [74,75] In a movable channel transistor, the idea is to physically separate the channel away from the drain so that in addition to electrostatic depletion, the OFF current can be reduced substantially Figure 3.2: (A) In normally ON device structure, the cantilever starts with contacting both the drain and source electrodes, resulting in active current flow.…”

Section: State Of Practice For Nano-electro-mechanical Fetsmentioning

confidence: 99%

Integrated Physics-Based Model for Low Power Bio-Inspired Computing

Unluer

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In silicon technology, device metrics such as power, delay, and reliability are hitting a brick wall, prompting industry to seek alternative materials, designs, and switching principles. This thesis investigates bio-inspired computing components through a case study that uses signal processing in axonal systems. A physics-based model is developed for each component of the action potential generation in an axon. The two main building blocks of an axon system consist of sequentially activated voltage-gated ion channels (the switch) and adenosine triphosphatase powered ion pumps (the battery). However, the primary aim in this investigation is not to replicate the biological details, but to replace the quantitatively accurate yet empirical operational equations with qualitative, physics-based microscopic models. The primary purposes of focusing on the physics in this study are to deconstruct biological components in terms of solid-state analogues and to understand their potential use for efficient low-power switches, even within conventional Boolean logic. Accordingly, a nano-electro-mechanical field-effect transistor, i.e., a relay, is used to model the ion channel in order to explain how these ion channels are similar to cantilevers that can switch efficiently. The model developed matches the 7.5mV /decade sub-thermal switching of the low-power sodium channels because it captures both the phase transition from metastable state to stable state and the charge multiplication effect. The electronic ratchets act as the ion pump that uses an energy source (adenosine triphosphate hydrolysis) to power ion flow against a concentration gradient to recharge the battery. This dissertation develops an electronic analogue of a ratchet, essentially a non-equilibrium diode. Furthermore, the research demonstrates that with the ratchet, universal Boolean logic is efficiently implemented and in fact, proves analytically why the electronic ratchet is low power due to ratchet being a voltage-controlled current source. The detailed modeling of the nano-mechanical relays and the ratchets using transport theory identify and conclude the underlying physics behind these devices' power efficient operations and limitations while making connections to the individual components in the axonal networks. c d Anneme ve Babama I am deeply grateful to the many people who have helped me complete this dissertation. To all those whom have supported me, including the numerous people whom I am unfortunately unable to mention below, I wish to express my sincerest thanks. Firstly, I have been incredibly fortunate to work with a truly inspirational advisor, Professor Avik Ghosh. During these formative years, Professor Ghosh has taught me with professional and personal excellence that I strive to embody. From his example, I have learned to become an engineer and a researcher. Only with his guidance and expertise have I been able to complete this work. Secondly, I wish to recognize all of my VINO Research Group colleagues, especially Frank Tseng, Carlos Polanc...

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Comparison of RSG-MOSFET and capacitive MEMS resonator detection

Cited by 28 publications

References 2 publications

3-D Design and Analysis of Functional NEMS-gate MOSFETs and SETs

3-D Design and Analysis of Functional NEMS-gate MOSFETs and SETs

Three-Dimensional Numerical Analysis of Switching Properties of High-Speed and Nonvolatile Nanoelectromechanical Memory

Integrated Physics-Based Model for Low Power Bio-Inspired Computing

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