Abstract:The efficiencies of argon radio frequency [Ar(RF)] and argon microwave [Ar(MW)] plasma treatments were compared in terms of contaminant removal and wire bond interfacial adhesion quality in this paper. The efficiency in contaminant removal was analyzed by applying Ar(RF) and Ar(MW) plasma treatments with operating frequencies of 13.56 MHz and 2.45 GHz, respectively, onto the light-emitting diode chip bond pad prior to the wire bonding process. Surface characterization results show that Ar(MW) plasma treatment … Show more
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