It has been reported that the good correlation in sensitivity and resolution between EUV exposure and EB exposure because of the similar mechanism of the photochemical-reaction in photoresists during exposure. However, in the early stages of EUV resist development, there are problems on the points of the cost and time-consuming to evaluate all EUV resist materials by EB exposure. Therefore, we investigated the possibility of using KrF exposure as the initial screening of EUV resists. In former report, we evaluated the correlation of sensitivity between KrF and EUV exposure, KrF and EB exposure, EB and EUV exposure respectively by using various type of resists. Then we could find there is some correlation between each exposure. In this report, we formulated some types of KrF resist and investigated whether there is a correlation of sensitivity between KrF and EUV exposures.