1993
DOI: 10.1049/el:19931356
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Comparison of optical waveguide losses in silicon-on-insulator

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Cited by 28 publications
(8 citation statements)
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“…Surface roughness produces strong scattering and high propagation loss due to the high index contrast between the silicon waveguide core and the cladding (air or SiO 2 ). As such, losses of silicon waveguides tend to increase with reduction in cross section [62]. Fortunately, new waveguide fabrication processes that are in development promise low-loss waveguides with submicron cross sections [63].…”
Section: Discussionmentioning
confidence: 98%
“…Surface roughness produces strong scattering and high propagation loss due to the high index contrast between the silicon waveguide core and the cladding (air or SiO 2 ). As such, losses of silicon waveguides tend to increase with reduction in cross section [62]. Fortunately, new waveguide fabrication processes that are in development promise low-loss waveguides with submicron cross sections [63].…”
Section: Discussionmentioning
confidence: 98%
“…This results in significant power losses when coupled to a cleaved fibre positioned in a V-groove structure. Attempts to overcome this have resulted in: (1) a saw cut being made across the ends of the waveguide structure flattening the interface region [8], [9], and this can possibly introduce losses via a reduction in optical quality at the waveguide ends; and (2) the passive V-groove fibre alignment structure (Figure 1(a)) being kept separate from the optical device and aligned as a final step once the ends of the optical device have themselves been cut and mechanically polished to an optical quality [10]. A commonly used alternative to these two techniques is the formation of rib waveguide and associated waveguide facets via plasma etching techniques [1 1], [12].…”
Section: Introductionmentioning
confidence: 99%
“…The <1 1 1> planes of bulk silicon act as etch stops when these and similar anisotropic etchants are used, creating V-shaped grooves with a sidewall angle of 54.74° to the wafer surface. Similar alignment dependent processing techniques are often applied to the fabrication of active and passive rib/ridge waveguide devices in order to achieve smooth sidewalls and hence minimize optical power losses [7], [8]. The 54.74° sidewall angle present along the length of a singlemode waveguide structure, although not greatly affecting its modal distribution, is also present at its ends.…”
Section: Introductionmentioning
confidence: 99%
“…The planes of bulk silicon act as etch stops when these and similar anisotropic etchants are used, creating V-shaped grooves with a sidewall angle of 54.74 to the wafer surface. Similar alignment dependent processing techniques are often applied to the fabrication of active and passive rib/ridge waveguide devices in order to achieve smooth sidewalls and hence minimize optical power losses [7], [8].…”
Section: Introductionmentioning
confidence: 99%
“…This results in significant power losses when coupled to a cleaved fiber positioned in a V-groove structure. Attempts to overcome this have resulted in either a saw cut being made across the ends of the waveguide structure flattening the interface region [8], [9], and this can possibly introduce losses via a reduction in optical quality at the waveguide ends. Or as depicted in Fig.…”
Section: Introductionmentioning
confidence: 99%