Comparison of nBn and nBp mid-wave barrier infrared photodetectors

Klem, John F.; Kim, Jungkwun; Cich, Michael Joseph; Hawkins, Samuel D.; Fortune, Torben Ray; Rienstra, Jeffrey L.

doi:10.1117/12.842772

Cited by 34 publications

(15 citation statements)

References 11 publications

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“…The traditional nBn structure requires bias to operate. Once zero bias operation is crucial, again pBn architecture may be used [21]. The large band offset requirement in one band and zero offset in the other is not the only one requirement to fabricate a barrier detector; the lattice matching between surrounding materials is also significant.…”

Section: Materials Considerations For Barrier Infrared Detectorsmentioning

confidence: 99%

Barrier infrared detectors

Martyniuk

Kopytko

Rogalski

2014

Opto-Electronics Review

105

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In 1959, Lawson and co-workers publication triggered development of variable band gap Hg1−xCdxTe (HgCdTe) alloys providing an unprecedented degree of freedom in infrared detector design. Over the five decades, this material system has successfully fought off major challenges from different material systems, but despite that it has more competitors today than ever before. It is interesting however, that none of these competitors can compete in terms of fundamental properties. They may promise to be more manufacturable, but never to provide higher performance or, with the exception of thermal detectors, to operate at higher temperatures.In the last two decades a several new concepts of photodetectors to improve their performance have been proposed including trapping detectors, barrier detectors, unipolar barrier photodiodes, and multistage detectors. This paper describes the present status of infrared barrier detectors. It is especially addressed to the group of III-V compounds including type-II superlattice materials, although HgCdTe barrier detectors are also included. It seems to be clear that certain of these solutions have merged as a real competitions of HgCdTe photodetectors.

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Section: Materials Considerations For Barrier Infrared Detectorsmentioning

confidence: 99%

Barrier infrared detectors

Martyniuk

Kopytko

Rogalski

2014

Opto-Electronics Review

105

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“…In the low-temperature region the nBn detector should exhibit a higher signal-to-noise ratio in comparison with a conventional p-n diode operating at the same temperature, and operate at a higher temperature with the same JDARK. Apart from CnBnn structures, Klipstein and Klem proposed structures with the p-type (Cp) contact layer, where -similarly to Cn -Cp is fabricated from either the same material or different but opposite doping than the absorber layer [20,21]. Incorporation of the p-type contact layer in a CpBn architecture allows to lower the turn on voltage (bias to where VBO does not influence the minority carrier transport) in comparison with CnBn structures.…”

Section: Barrier Detectorsmentioning

confidence: 99%

Barrier Detectors Versus Homojunction Photodiode

Martyniuk¹,

Gawron²

2014

Metrology and Measurement Systems

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In the last two decades several new concepts of photodetectors to improve their performance have been proposed. New strategies are especially addressed to the group of so called high-operating-temperature detectors where -apart from increasing of operating temperature -both the size and power consumption reduction is expected. In this paper a new strategy in the photo-detector design is presented -the barrier detectors: CnBn; CnBnN + , CpBn and unipolar barrier photodiodes. In spite of considering barrier detectors based on A III BV bulk compounds and type-II superlattices as having theoretically a better performance than those based on HgCdTe, the latter compound is also used to fabricate barrier detectors. Among many new applications of barrier detectors the detection of explosives can be extremely important due to an increased threat of terrorist attacks. This paper presents the status of the barrier detectors and compares the performance of mid-wave HgCdTe barrier detectors and unipolar barrier photodiodes.

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“…When zero-bias operation is crucial, again the pBn architecture may be used. 22 Having a large band offset in one band and zero offset in the other is not the only requirement to fabricate an XBn detector; lattice matching between surrounding materials is also significant.…”

Section: Materials Considerations For Xbn Hot Detectorsmentioning

confidence: 99%

Mid-Wavelength Infrared nBn for HOT Detectors

Rogalski

Martyniuk

2014

Journal of Elec Materi

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Recently, new strategies to achieve high-operating-temperature (HOT) detectors have been proposed, including barrier structures such as nBn devices, unipolar barrier photodiodes, alternative materials such as superlattices, and multistage (cascade) infrared devices. In the case of nBn detectors, the barriers must be correctly engineered and correctly located in the device structure to achieve optimal performance. This paper presents the limitations of barrier unipolar devices and the progress in their development for HOT operation in the mid-wavelength infrared range. Their performance is compared with state-of-the-art HgCdTe photodiodes.

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Comparison of nBn and nBp mid-wave barrier infrared photodetectors

Cited by 34 publications

References 11 publications

Barrier infrared detectors

Barrier infrared detectors

Barrier Detectors Versus Homojunction Photodiode

Mid-Wavelength Infrared nBn for HOT Detectors

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