In this article, we demonstrate the usefulness of using a Q-switched Nd:Yttrium-aluminum-garnet laser to induce various phases of TiSi 2 in 350 Å of Ti layer deposited onto ͑100͒ Si substrates by varying the pulse width, , and energy fluence of the laser. Two sets of experiments were carried out. In the first set of experiments, and energy fluence of the laser are set at 0.18 s and approximately 1.5 J / cm 2 , respectively. The laser annealed Ti/ Si sample was then characterized using micro-Raman spectroscopy and it was found that C49 TiSi 2 is formed at two different temperatures. One is formed at a nonmelting temperature, 680°C, and the other formation temperature is at a high temperature of around 1975°C. A mechanism is proposed to explain the formation of C49 under these two different conditions. In addition, we also note that C40 is formed between these two temperatures. In the second set of experiments, increasing to 1.6 s and reducing the energy fluence to approximately 1.0 J / cm 2 resulted in the formation of pure refractory C40. This refractory metal free C40 phase is confirmed with glancing angle x-ray diffraction.