Comparison of memristor models for microwave circuit simulations in time and frequency domain

Abstract

As reported in the open literature, there are many memristor models for the circuit-level simulations. Some of them are not particularly suitable for microwave circuit simulations. At RF/microwave frequencies, the memristor dynamics become an important issue for the transition process. In this paper we present a number of different SPICE memristor model groups. Each group is explained using representative models, which are analysed and compared from the microwave circuit analysis viewpoint. We consider the model behaviour at RF/microwave frequencies and the memristance setting issues. Results are compared and the best models are recommended.

Charge Transport inside TiO2 Memristors Prepared via FEBID

“…Their implementation is suitable due to their small dimensions, low power consumption, and fast switching times. Different models have been employed to cover a wide range of applications [ 35 ]. The range of operating values of resistance of our memristor is from 3 kΩ to 600 kΩ and capacitance is from 0.1 fF to 10 fF, depending on the thickness and purity of the TiO 2 layer and the total area of the device forming a capacitor.…”