Comparison of linear transformations for deriving kinetic constants during silicon etching in Cl2 environment

Knizikevičius, R.

doi:10.1016/j.vacuum.2018.08.056

Cited by 2 publications

(2 citation statements)

References 8 publications

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“…Moreover, the values of R-square and adjusted R-square indicate that the theoretical model better fits the experimental data 18 . The goodness-of-fit parameters are thoroughly described in the work 22 . According to the chemical kinetics, the reaction of F atoms with silicon is 2nd overall order reaction.…”

Section: Resultsmentioning

confidence: 99%

Statistical insights into the reaction of fluorine atoms with silicon

Knizikevičius

2020

Sci Rep

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The dependences of silicon etching rate on the concentration of F atoms are investigated theoretically. The nonlinear regression analysis of the experimental data indicates that the reaction of F atoms with silicon is 2nd overall order reaction. The relationship between overall reaction order and kinetic reaction order is established using the etching rate equation. It is found that kinetic reaction order monotonically decreases with the increase in concentration of F atoms due to the increased surface coverage. Surface passivation by the reaction products is not observed under the investigated experimental conditions. Scanning tunnelling microscopy (STM) is widely used to analyse chemical reactions taking place on the silicon surface. STM enabled to measure the etching rate dependences on the initial concentration of SiCl, SiBr, and SiI radicals 1,2. During the experiments, silicon substrates were dosed with molecular halogens at room temperature in order to obtain the desired initial concentration. Subsequently, silicon substrates were heated because chemical reactions between the chemisorbed radicals occur only at elevated temperatures. STM provided useful information about the reaction and desorption pathways 3 and confirmed that silicon dihalides are the final reaction products. The same experimental procedure is used to investigate chemical reaction between SiF radicals on the silicon surface. The etching rate is measured only at low initial concentration of SiF radicals because fluorine atoms due to small atomic radius penetrate into the silicon lattice 4,5. The experimental measurements 6 shown that at temperature 825 K planar removal of silicon atoms occurs together with multilayer pitting, which result in the increased surface roughness. Steady-state reaction of F atoms with silicon is investigated using large array of diagnostic techniques 7. The most common observations are following: (a) SiF 4 molecules detected by mass spectrometry of exhaust species 8 ; (b) SiF x (x ≤ 3) radicals found on the etched Si surface using X-ray photoemission spectroscopy 9 ; (c) SiF 2 molecules detected by chemiluminescence 10 and laser-induced fluorescence spectroscopy 11 ; (d) SiF 2 molecules polymerize on the surface 12. (e) SiF radicals passivate the Si surface 13 ;

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Section: Resultsmentioning

confidence: 99%

Statistical insights into the reaction of fluorine atoms with silicon

Knizikevičius

2020

Sci Rep

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“…Lineweaver-Burk (L-B) plots of 1/absorbance vs. 1/urea were used to reveal the mechanism of inhibition. 32,33 Urease inhibition was measured by varying the concentration of urea in the presence of different concentrations of Cu-CP-COOH and Cu-CP-NO 2 . Inhibitory constants (K i ) were determined as the intersection on the x-axis of the plot of the slope vs. different concentrations of inhibitor, where the slopes were obtained from the L-B lines.…”

Section: Inhibition Kinetic Studymentioning

confidence: 99%