Comparison of IGCT and IGBT for the use in the modular multilevel converter for HVDC applications

Buschendorf, Martin; Weber, Jens; Bernet, Steffen

doi:10.1109/ssd.2012.6198118

Cited by 41 publications

(10 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Though unsuccessful attempts were made to obtain preliminary 4.5kV BIGT [39] and BGCT data [41], it was realized that the advantages of bi-directionality would probably benefit both device types in the same measures and that the conclusions would be the same. These results are consistent with other studies that show that standard IGCTs allow greater power in the MMC circuit at high power levels [8], [42] than standard IGBTs.…”

Section: Summary Of Thermal Reliabilitysupporting

confidence: 93%

On the Potential of IGCTs in HVDC

Ladoux

Serbia

Carroll³

2015

IEEE J. Emerg. Sel. Topics Power Electron.

View full text Add to dashboard Cite

In today's VSC HVDC solutions, IGBTs (Insulated Gate Bipolar Transistors) are used exclusively, generally in module form where the Modular Multilevel C o n v e r t e r ( M M C ) i s c o n c e r n e d ; t h i s e n t a i l s a n u m b e r o f protective measures which increases complexity and cost. As w e m o v e t o h i g h e r t r a n s m i t t e d p o w e r s , t h e u s e o f I G C T s (Integrated Gate-Commutated Thyristors) would allow both higher voltages and currents while simultaneously reducing l o s s e s , f a i l u r e r a t e s a n d c o s t s , a s t h i s p a p e r w i l l t r y t o demonstrate by comparing current production IGCTS with both current module and press-pack IGBTs. Index Terms-HVDC transmission, Power semiconductor devices, Thermal analysis, AC-DC power converters, MMC2168-6777 (c)

show abstract

Section: Summary Of Thermal Reliabilitysupporting

confidence: 93%

On the Potential of IGCTs in HVDC

Ladoux

Serbia

Carroll³

2015

IEEE J. Emerg. Sel. Topics Power Electron.

View full text Add to dashboard Cite

show abstract

“…This stored energy is mainly dissipated in the snubber resistor (R Cl ) or fed back to charge the dc link capacitor (C DC-link ) [22]. In this paper, the total stored energy in the di/dt limiting inductor is considered to be snubber circuit power loss since the loss analysis is performed to compare the full functionality of different power semiconductor switching devices on an equal basis.…”

Section: B Loss Modeling Of a Snubber Circuit For The Igct Platformmentioning

confidence: 99%

Loss Analysis and Comparison of High Power Semiconductor Devices in 5MW PMSG MV Wind Turbine Systems

Lee¹,

Suh²,

Kang³

2015

Journal of Power Electronics

View full text Add to dashboard Cite

This paper provides a loss analysis and comparison of high power semiconductor devices in 5MW Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) Wind Turbine Systems (WTSs). High power semiconductor devices of the press-pack type IGCT, module type IGBT, press-pack type IGBT, and press-pack type IEGT of both 4.5kV and 6.5kV are considered in this paper. Benchmarking is performed based on the back-to-back type 3-level Neutral Point Clamped Voltage Source Converters (3L-NPC VSCs) supplied from a grid voltage of 4160V. The feasible number of semiconductor devices in parallel is designed through a loss analysis considering both the conduction and switching losses under the operating conditions of 5MW PMSG wind turbines, particularly for application in offshore wind farms. This paper investigates the loss analysis and thermal performance of 5MW 3L-NPC wind power inverters under the operating conditions of various power factors. The loss analysis and thermal analysis are confirmed through PLECS Blockset simulations with Matlab Simulink. The comparison results show that the press-pack type IGCT has the highest efficiency including the snubber loss factor.

show abstract

“…Thus this snubber circuitry dissipates additional power loss and gives a rise to an important loss factor. There have been several kinds of active RCD snubber for GTO device trying to meet both wide Safe Operating Area (SOA) and low loss [12]- [16]. However those snubber circuitries add device count and circuit complexity.…”

Section: Fig 2 Press-pack Type Igct (Left) and Diode (Right) For MVmentioning

confidence: 99%

Energy recovery flyback type snubber for 10kV IGCT in 7MW wind turbine systems

Shirmohammadi

Lee

Suh

2015

2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia)

View full text Add to dashboard Cite

10kV IGCT has been recently developed and has the potential to push wind turbine systems to higher power and voltage rating. Converters employing IGCTs need snubber and OVP circuit to limit the rate of rise of current and peak over voltage across IGCT during turn on and off state respectively. The conventional RCD snubber which is used in such power converter dissipates a significant amount of power. In order to reduce the amount of energy lost by conventional RCD snubber, this paper proposes a flyback-type snubber circuit that not only meets all of the IGCTs characteristics during on and off-state but also significantly saves the power loss. Loss analysis of conventional di/dt snubber and OVP circuit is performed for the 3-level NPC type back-to-back VSC supplied from grid voltage of 6.9kV. In comparison with the conventional snubber, flyback type snubber has a fewer number of components and improved efficiency leading to a reliable and efficient wind turbine systems.

show abstract

Comparison of IGCT and IGBT for the use in the modular multilevel converter for HVDC applications

Cited by 41 publications

References 7 publications

On the Potential of IGCTs in HVDC

On the Potential of IGCTs in HVDC

Loss Analysis and Comparison of High Power Semiconductor Devices in 5MW PMSG MV Wind Turbine Systems

Energy recovery flyback type snubber for 10kV IGCT in 7MW wind turbine systems

Contact Info

Product

Resources

About