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1999
DOI: 10.1109/28.753645
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Comparison of high-power IGBT's and hard-driven GTO's for high-power inverters

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Cited by 59 publications
(11 citation statements)
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“…On the other hand, the IGBT module has multi-material interface that is sensitive to thermal cycling. Therefore IGCT has higher thermal cycling capability than the IGBT [9]. ETO uses GTO as the main switch, which also uses the press pack technology hence it has similar thermal cycling capability as that of the IGCT.…”
Section: E Reliabilitymentioning
confidence: 96%
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“…On the other hand, the IGBT module has multi-material interface that is sensitive to thermal cycling. Therefore IGCT has higher thermal cycling capability than the IGBT [9]. ETO uses GTO as the main switch, which also uses the press pack technology hence it has similar thermal cycling capability as that of the IGCT.…”
Section: E Reliabilitymentioning
confidence: 96%
“…IGCT consists of only one silicon wafer, a few mechanical parts, and an integrated gate driver. IGCT has a substantial cost advantage compared to the IGBT due to its high silicon utilization and high yield [9]. ETO has an even lower cost than that of IGCT.…”
Section: F Component Cost and System Costmentioning
confidence: 97%
“…It consists of a three-phase three-level IGCT inverter (main inverter), with a two-leg two-level IGBT inverter (subinverter) in series with each phase. IGCTs with a high voltageblocking capability are used to provide the main power with high reliability and low losses [22], [23], IGBTs with a higher switching-frequency capability are used to reduce the output harmonic content.…”
Section: Power-part Topologymentioning
confidence: 99%
“…Th substrate (collector and emitter) ar copper bus bars and taken to th module. The housing cavity is f silicone gel and covered with a pl (a) [14]. The IGBT by physical reasons, so ted in parallel in order to capability.…”
Section: Reliability Of the Igbmentioning
confidence: 99%