Comparison of high-order silanes and island formation phenomena during SiGe epitaxy at 500 °C

Byeon, Dae Seop; Choi, Yongjoon; Cho, Choonghee; Yoon, Dong Soo; Lee, Kiseok; Baik, Seunghyun; Ko, Dae Hong

doi:10.1007/s40042-021-00134-x

Cited by 5 publications

(1 citation statement)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is consistent with the values previously reported by Hart et al for tetrasilane and digermane [8]. The surface morphology of epitaxial SiGe grown at 500 • C was reported in our previous study [18]. Similar to Si epitaxy, good morphology was obtained when disilane was used, whereas particle formation was observed when trisilane or tetrasilane was used.…”

Section: Resultssupporting

confidence: 92%

Epitaxial Growth of Si and SiGe Using High-Order Silanes without a Carrier Gas at Low Temperatures via UHVCVD and LPCVD

et al. 2021

Self Cite

View full text Add to dashboard Cite

Conventional Si or SiGe epitaxy via chemical vapor deposition is performed at high temperatures with a large amount of hydrogen gas using silane (SiH4) or dichlorosilane (SiCl2H2) precursors. These conventional precursors show low growth rates at low temperatures, particularly below 500 °C although a low thermal budget becomes more important for modern fabrication techniques. High-order silane precursors, such as disilane, trisilane, and tetrasilane, are candidates for low-temperature epitaxy due to the lower strength of the Si-Si bonds compared to that of the Si-H bonds. In addition, the consumption of vast amounts of hydrogen gas is an additional burden of the low-temperature process due to its low throughput. In this study, we explored Si and SiGe epitaxial growth behaviors using several high-order silanes under ultra-high vacuum chemical vapor deposition (UHVCVD) and low-pressure chemical vapor deposition (LPCVD) conditions without a carrier gas. Disilane showed high-quality epi-growth under both pressure conditions, whereas trisilane and tetrasilane showed enhanced growth rates and lower quality.

show abstract

Section: Resultssupporting

confidence: 92%

Epitaxial Growth of Si and SiGe Using High-Order Silanes without a Carrier Gas at Low Temperatures via UHVCVD and LPCVD

et al. 2021

Self Cite

View full text Add to dashboard Cite

show abstract

Characteristics of high-order silane based Si and SiGe epitaxial growth under 600 ℃

Yoon,

Shin,

et al. 2024

Journal of Crystal Growth

View full text Add to dashboard Cite

Impact of High-Temperature Annealing on Interfacial Layers Grown by O₂ Plasma on Si0.₅Ge_0.5 Substrates

Lee

Lin

Lee

et al. 2022

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Comparison of high-order silanes and island formation phenomena during SiGe epitaxy at 500 °C

Cited by 5 publications

References 19 publications

Epitaxial Growth of Si and SiGe Using High-Order Silanes without a Carrier Gas at Low Temperatures via UHVCVD and LPCVD

Epitaxial Growth of Si and SiGe Using High-Order Silanes without a Carrier Gas at Low Temperatures via UHVCVD and LPCVD

Characteristics of high-order silane based Si and SiGe epitaxial growth under 600 ℃

Impact of High-Temperature Annealing on Interfacial Layers Grown by O₂ Plasma on Si0.₅Ge_0.5 Substrates

Contact Info

Product

Resources

About

Comparison of high-order silanes and island formation phenomena during SiGe epitaxy at 500 °C

Cited by 5 publications

References 19 publications

Epitaxial Growth of Si and SiGe Using High-Order Silanes without a Carrier Gas at Low Temperatures via UHVCVD and LPCVD

Epitaxial Growth of Si and SiGe Using High-Order Silanes without a Carrier Gas at Low Temperatures via UHVCVD and LPCVD

Characteristics of high-order silane based Si and SiGe epitaxial growth under 600 ℃

Impact of High-Temperature Annealing on Interfacial Layers Grown by O2 Plasma on Si0.5Ge0.5 Substrates

Contact Info

Product

Resources

About

Impact of High-Temperature Annealing on Interfacial Layers Grown by O₂ Plasma on Si0.₅Ge_0.5 Substrates