Comparison of Ge, InGaAs p-n junction solar cell

Korun, M.; Navruz, Tuğba Selcen

doi:10.1088/1742-6596/707/1/012035

Cited by 9 publications

(6 citation statements)

References 6 publications

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“…In addition, problems in carrier collection, and nonoptimized ARC and window layer, could also be responsible for such a reduction. The InGaAs bottom cell showed an excellent PV performance: J SC of 41.2 mA/cm 2 , V OC of 369.9 mV and FF of 74.5%, providing an overall h of 11.4% which is close to the theoretical value reported in [42] The experimental dark J-V curves were then fitted to a two-diode model to have a better insight into the characteristics of the devices [43]. One ideality factor has been fixed equal to 1, so the fit parameters are: one ideality factor, n, the saturation current densities J 01 and J 02 , and the series and shunt resistances, R s and R sh , respectively.…”

Section: Single Junction Cellssupporting

confidence: 82%

Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates

et al. 2023

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The integration of III-V multi-junction solar cells on Si substrates is currently one of the most promising possibilities to combine high photovoltaic performance with a reduction of the manufacturing costs. In this work, we propose a prospective study for the realization of an InP/InGaAs tandem solar cell lattice-matched to InP on a commercially available Si template by direct MOVPE growth. The InP top cell and the InGaAs bottom cell were firstly separately grown and optimized using InP substrates, which exhibited conversion efficiencies of 13.5% and 11.4%, respectively. The two devices were then combined in a tandem device by introducing an intermediate InP/AlInAs lattice-matched tunnel junction, showing an efficiency of 18.4%. As an intermediate step towards the realization of the tandem device on Si, the InP and InGaAs single junction solar cells were grown on top of a commercial InP/GaP/Si template. This transitional stage enabled to isolate and evaluate the effects of the growth of III-V on Si on the photovoltaic performance through the comparison with the aforementioned devices on InP. Each cell was electrically characterized by external quantum efficiency and dark and illuminated current-voltage under solar simulator. The material quality was also analyzed by means of X-ray diffraction, Atomic-Force Microscopy, Transmission Electron and Scanning Electron Microscopy. The III-V on Si devices showed efficiencies of 3.6% and 2.0% for the InP and InGaAs solar cells, respectively.

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Section: Single Junction Cellssupporting

confidence: 82%

Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates

et al. 2023

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“…It is important to note that Pt nanoparticles play a key role in catalyzing water reduction reaction efficiently, see the Supplementary Experimental Section, and such GaN nanostructures provide enormous catalytic sites for Pt deposition that significantly facilitate water reduction reaction of platinized GaN/3J samples. Considering the small photovoltage of ∼0.3 V provided by the bottom Ge junction, − compared to the large photo voltage in the presented device, we can reasonably conclude that a GaN-protected GaInP 2 /GaAs double-junction tandem structure can drive unassisted solar water splitting with significantly improved (light-limited) efficiency. In addition, the use of RuO x , IrO x , or other high-performance counter electrodes can lead to improved performance. ,,− …”

mentioning

confidence: 52%

Stable Unassisted Solar Water Splitting on Semiconductor Photocathodes Protected by Multifunctional GaN Nanostructures

et al. 2019

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Producing hydrogen by unassisted solar water splitting is one essential step to make direct solar fuel conversion a viable energy source. To date, however, there has been no demonstration of stable photoelectrodes for high-efficiency photoelectrochemical water splitting. In this work, we report that a GaInP 2 /GaAs/Ge triple-junction (3J) photocathode protected by multifunctional GaN nanostructures can enable both efficient and relatively stable solar water splitting. A 12.6% solar-to-hydrogen (STH) efficiency is measured without any external bias. Of particular importance, we demonstrate relatively stable solar water splitting for 80 h in three-electrode configuration and 57 h in twoelectrode measurement at zero bias. This is the best reported stability for multijunction III-V semiconductor photocathodes in two-electrode configuration to our knowledge. The multifunctional GaN nanostructure significantly reduces the charge transfer resistance at the semiconductor/electrolyte interface and protects III−V materials against corrosion. Such multifunctional GaN photocatalytic nanostructures provide a new pathway to improve the performance of conventional photoelectrodes to achieve both efficient and stable unassisted solar water splitting.

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“…Our reconfigurable TPV platform, demonstrated using standard silicon fabrication process technology, can be scaled for harnessing waste heat by proper engineering of heat channels from source to emitter 52 .Considering the current state-of-art germanium photovoltaic detectors with quantum efficiency of over 10%, we can significantly improve the overall efficiency of our TPV (>4 mW cm −2 ) 53 . Leveraging the NEMS technology also allows us to overcome fabrication limitations by making TPV cells with larger initial gaps between emitter and detector, which In the hot-stack, chromium (Cr) film helps in adhesion and nucleation of tungsten thin-film, while a-Si provides mechanical support when the bridge is suspended.…”

Section: Discussionmentioning

confidence: 99%

“…Our TPV cells are currently limited by the low efficiency (𝜂 𝐷 ≈ 0.3 × 10 −4 ) of Ge photodetector due to high contact resistance and low doping concentrations of the active region (see supplementary section 7). Considering that the photodetectors at this spectral range have been widely demonstrated with efficiency as high as 10%, we expect our heat recycling efficiency could be significantly higher (> 10 mW ⋅ cm −2 ) 48 .…”

mentioning

confidence: 99%

Integrated near-field thermo-photovoltaics for heat recycling

et al. 2020

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Energy transferred via thermal radiation between two surfaces separated by nanometer distances can be much larger than the blackbody limit. However, realizing a scalable platform that utilizes this near-field energy exchange mechanism to generate electricity remains a challenge. Here, we present a fully integrated, reconfigurable and scalable platform operating in the near-field regime that performs controlled heat extraction and energy recycling. Our platform relies on an integrated nano-electromechanical system that enables precise positioning of a thermal emitter within nanometer distances from a room-temperature germanium photodetector to form a thermo-photovoltaic cell. We demonstrate over an order of magnitude enhancement of power generation (P gen~1 .25 μWcm −2) in our thermophotovoltaic cell by actively tuning the gap between a hot-emitter (T E~8 80 K) and the cold photodetector (T D~3 00 K) from~500 nm down to~100 nm. Our nanoelectromechanical system consumes negligible tuning power (P gen /P NEMS~1 0 4) and relies on scalable silicon-based process technologies.

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Comparison of Ge, InGaAs p-n junction solar cell

Cited by 9 publications

References 6 publications

Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates

Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates

Stable Unassisted Solar Water Splitting on Semiconductor Photocathodes Protected by Multifunctional GaN Nanostructures

Integrated near-field thermo-photovoltaics for heat recycling

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