Comparison of External Gettering Efficiency of Phosphorus Diffusion, Aluminium-Silicon Alloying and Helium Implantation in Silicon Wafers

Gay, N.; Martinuzzi, S.

doi:10.4028/www.scientific.net/ssp.57-58.115

Cited by 3 publications

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“…Various gettering techniques are used, such as internal gettering, high-boronconcentration-activated gettering,external gettering in the modes of (Gay andMartinuzzi 1997, Myers et al 2000): (a) back-side poly-Si gettering, (b) Al back-side gettering (Al-Si alloying), (c) phosphorus diffusion gettering and (d) gettering at nanocavities introduced by helium or hydrogen implantation (Williams et al 1999). According to the physical mechanism operating, the above procedures may also be classified as relaxation or segregation or injection-induced gettering (Myers et al 2000, Schröter et al 1992.…”

Section: Introductionmentioning

confidence: 99%

Internal gettering in epi-silicon prepared under different conditions

Frigeri¹,

Borionetti²,

Godio³

2002

J. Phys.: Condens. Matter

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The efficiency of internal gettering in epi-silicon was studied in samples prepared under different conditions as compared to external gettering and p + gettering. The parameters changed were substrate resistivity, oxygen content and presence/absence of poly-Si on the back-side. The efficiency of internal gettering was assessed by measurement of the electron-beam-induced-current contrast versus temperature and applying existing models for interpreting the results. Internal gettering is effective also in p + substrates with poly-Si on the back-side when the density of oxygen precipitates is high and their size small. Internal gettering is not effective for low density of oxygen precipitates when either p + substrates or poly-Si or both are used.

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Section: Introductionmentioning

confidence: 99%

Internal gettering in epi-silicon prepared under different conditions

Frigeri¹,

Borionetti²,

Godio³

2002

J. Phys.: Condens. Matter

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Nickel precipitation in large-diameter Czochralski silicon

Yang

Chen

et al. 2004

Physica B: Condensed Matter

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Limiting Factors of Backside External Gettering by Nanocavities and Aluminum-Silicon Alloying in Silicon Wafers

Martinuzzi

1998

MRS Proc.

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Float zone silicon single crystalline wafers are submitted to He ion implantations at various energy levels and fluences in the ranges 40 to 120 keV and 1016 to 1017 cm−2, respectively. Cavities are formed after annealing at 900°C for 1 h in argon. Al-Si gettering results from the deposition of a backside 1 µm thick Al wafer and annealing at 900'C for 4 h in argon. The wafers are voluntarily contaminated by 1014 to 1017 cm−3nickel atoms and diffusion length of minority carriers is determined by SPV technique and measured before and after gettering.It is found that gettering by cavities works fairly well provided the fluence is 1017 cm−2. The gettering efficiency decreases in heavily contaminated samples suggesting that the capture of impurities by the cavities is limited by the saturation of their internal surface. Al-Si alloying appears more efficient at higher contamination levels. This is most likely due to the high solubility of metal atoms in the liquid Al-Si alloy formed during the annealing.

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Comparison of External Gettering Efficiency of Phosphorus Diffusion, Aluminium-Silicon Alloying and Helium Implantation in Silicon Wafers

Cited by 3 publications

References 0 publications

Internal gettering in epi-silicon prepared under different conditions

Internal gettering in epi-silicon prepared under different conditions

Nickel precipitation in large-diameter Czochralski silicon

Limiting Factors of Backside External Gettering by Nanocavities and Aluminum-Silicon Alloying in Silicon Wafers

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