Comparison of EUV Patterning between PTD and NTD for 2Xnm DRAM

Oh, Changil; Kim, Jaeheon; Heo, Junggun; Lee, Junghyung; Bok, Cheol-Kyu; Kim, Myongsoo; Kang, Hyosang

doi:10.2494/photopolymer.25.593

Cited by 5 publications

(4 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Simulations have shown that, compared to PTD, NTD results in better normalized image log-slope for CH patterns [7,8] . In addition, NTD has the possibility to achieve smooth line width roughness (LWR) with low swelling/dissolution in organic solvent [9] .…”

Section: Introductionmentioning

confidence: 95%

“…This emphasizes the potential of EUV lithography as the next leading technology for semiconductor device manufacturing by obeying Moore's law. To expand the application of EUV lithography, new process techniques were proposed, such as the combination of EUV lithography and directed self-assembly [1][2][3][4] and negative tone development (NTD) [3][4][5][6][7][8] .…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Evaluations of negative tone development resist and process for EUV lithography

Takahashi¹,

Fujitani²,

Itani³

2014

SPIE Proceedings

View full text Add to dashboard Cite

Resists, underlayers, and new rinse processes were evaluated for negative tone development (NTD) using extreme ultraviolet (EUV) lithography. The most recently developed resists show resolution and sensitivity improvements. High remaining-film thickness was also achieved for better etching resistance. The underlayers smoothed the line width roughness (LWR) and prevented pattern collapse. In addition, the proposed NTD-compatible rinse process further assisted to prevent pattern collapse. The best NTD performance at EIDEC till date was achieved: 22 nm line and space (L/S) resolution, 5.4 nm LWR, and 16.8 mJ/cm 2 sensitivity with annular illumination for a small-field exposure tool (SFET). Furthermore, an ultimate resolution of 17 nm L/S was achieved with x-dipole illumination of SFET. The lithographic performance of the best NTD resist is comparable to the typical positive tone development resist.

show abstract

Section: Introductionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

Evaluations of negative tone development resist and process for EUV lithography

Takahashi¹,

Fujitani²,

Itani³

2014

SPIE Proceedings

View full text Add to dashboard Cite

show abstract

“…Resist development or the resist dissolution process continues to be a research topic of particular interest. [15][16][17][18][19][20][21][22][23][24][25][26] The generally accepted industry standard for resist development is the aqueous alkali-based 0.26 N tetramethylammonium hydroxide solution (aq. TMAH).…”

mentioning

confidence: 99%

“…On the other hand, the use of organic solvents, which induces negative-tone resist development, is also being considered for its potential in trench and contact hole patterning applications. 8,17) Research on this type of development process for EUV lithography is still in the primitive stage. Hence, there is significant interest in further advancement.…”

mentioning

confidence: 99%

In situ analysis of negative-tone resist pattern formation using organic-solvent-based developer process

Santillan

Yamada

Itani³

2013

Appl. Phys. Express

View full text Add to dashboard Cite

In situ resist “pattern formation” analysis during the development process using high-speed atomic force microscopy has been improved for application not only for conventional aqueous 0.26 N tetramethylammonium hydroxide (aq. TMAH), but also organic solvent n-butyl acetate (nBA) developers. Comparative investigations of resist dissolution in these developers, using the same resist material (hybrid of polyhydroxystyrene and methacrylate), showed a grainlike, uniform dissolution of the “unexposed resist film” in nBA development and uneven dissolution of the “exposed resist film” in aq. TMAH development. These results suggest the importance of dissolution uniformity in further improving the resulting pattern line width roughness.

show abstract

Optimization of resist parameters to improve the profile and process window of the contact pattern in advanced node

Dong

Zhang

et al. 2016

J. Micro/Nanolith. MEMS MOEMS

View full text Add to dashboard Cite

Comparison of EUV Patterning between PTD and NTD for 2Xnm DRAM

Cited by 5 publications

References 4 publications

Evaluations of negative tone development resist and process for EUV lithography

Evaluations of negative tone development resist and process for EUV lithography

In situ analysis of negative-tone resist pattern formation using organic-solvent-based developer process

Optimization of resist parameters to improve the profile and process window of the contact pattern in advanced node

Contact Info

Product

Resources

About