In this paper, we
report the excellent field emission properties
of Q-carbon and analyze its field emission characteristics through
structural, morphological, and electronic property correlations, supported
by density functional theory (DFT) simulation studies. The Q-carbon
field emitters show impressive and stable field emission properties,
such as a low turn-on electric field of ∼2.38 V/μm, a
high emission current density of ∼33 μA/cm2, and a critical field of ∼2.44 V/μm for the transition
from a linear region to the saturation region in the F–N plot.
The outstanding field emission properties of Q-carbon are attributed
to (i) a unique sp2/sp3 mixture in Q-carbon,
(ii) sp2-bonded highly conductive amorphous carbon-rich
channels inside the Q-carbon cluster, (iii) a large local field enhancement
due to the local geometry and microstructure of Q-carbon, and (iv)
the presence of sp2-bonded amorphous carbon regions in
the composite film. The temperature-dependent field emission properties,
such as extreme sensitivity and an enhancement in the emission current
density with temperature, can be explained by the local density of
states near the Fermi level and the excellent thermal stability of
the Q-carbon field emitters. From DFT simulation studies, the computed
work function and the field-enhancement factor were determined to
be 3.62 eV and ∼2300, respectively, which explains the excellent
field emission characteristics of Q-carbon. The obtained field emission
properties, in most cases, were superior to those from other carbon/diamond-based
field emitters, which will open new frontiers in field emission-based
electronic applications.