“…The noise-generating processes include thermal effects, fluctuations of the critical current and of the normal-state resistance due to charge trapping at the barrier, as well as thermally activated flux motion at the boundary and in nearby areas of the film (Hao et al, 1994). Like other junctions involving high-T c cuprate interfaces, the grain-boundary junctions display 6 See, for example, Gross and Mayer, 1991;Lathrop et al, 1991;Divin et al, 1992;Kawasaki et al, 1992;Miklich et al, 1992;Hammond et al, 1993;Koelle et al, 1993a;Hao et al, 1994Hao et al, , 1996Hao et al, , 1997MacFarlane et al, 1995MacFarlane et al, , 1997Marx et al, 1995aMarx et al, , 1995bFischer et al, 1997 Yi et al (1996) and Tarte et al (2001), were measured at 4.2 K. After Tarte et al (2001); figure courtesy of E. Tarte and J. Ransley, Cambridge University, UK.…”