Comparison of effect of 5 MeV proton and Co-60 gamma irradiation on silicon NPN rf power transistors and N–channel depletion MOSFETs

Prakash, A. P. Gnana; Pradeep, Thalappil; Hegde, Vinayakprasanna N.; Pushpa, N.; Bajpai, P. K.; Patel, Shiv P.; Trivedi, T.; Bhushan, K. G.

doi:10.1080/10420150.2017.1421189

Cited by 13 publications

(5 citation statements)

References 14 publications

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“…In this process, it was possible to relate them to circuit metrics, which, in turn, provided expected performance changes of similar LNAs to designers. SiGe HBTs can degrade due to irradiation traps generated in the EB spacer region, leading to an increase in the junction capacitance [4,37,38]. X-ray irradiation does not necessarily lower transconductance (g m ) [3], but slight deviations from the initial biasing point may lead to smaller g m , degrading the gain and noise performance of a SiGe LNA [4,11,35,36].…”

Section: Performance Degradation and Small-signal Modelingmentioning

confidence: 99%

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Kim,

Ryu,

Lee

et al. 2024

Electronics

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In this study, the degradation characteristics of radio frequency (RF)-low-noise amplifiers (LNA) due to a total ionizing dose (TID) is investigated. As a device-under-test (DUT), sample LNAs were prepared using silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) as core elements. The LNA was based on a cascode stage with emitter degeneration for narrowband applications. By using a simplified small-signal model of a SiGe HBT, design equations such as gain, impedance matching, and noise figure (NF) were derived for analyzing TID-induced degradations in the circuit-level performance. To study radiation effects in circuits, the SiGe-RF-LNAs fabricated in a commercial 350 nm SiGe technology were exposed to 10-keV X-rays to a total ionizing dose of up to 3 Mrad(SiO2). The TID-induced performance changes of the LNA were modeled by applying degradation to device parameters. In the modeling process, new parameter values after irradiation were estimated based on information in the literature, without direct measurements of SiGe HBTs used in the LNA chip. As a result, the relative contributions of parameters on the circuit metrics were compared, identifying dominant parameters for degradation modeling. For the TID effects on input matching (S11) and NF, the base resistance (RB) and the base-to-emitter capacitance (Cπ) of the input transistor were mostly responsible, whereas the transconductances (gm) played a key role in the output matching (S22) and gain (S21). To validate the proposed approach, it has been applied to a different LNA in the literature and the modeling results predicted the TID-induced degradations within reasonable ranges.

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Section: Performance Degradation and Small-signal Modelingmentioning

confidence: 99%

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Kim,

Ryu,

Lee

et al. 2024

Electronics

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“…Given that radiation exists both in the atmosphere and the space environment, it is imperative to account for its effects in aerospace applications [9][10][11][12]. Several research groups reported numerous investigations into the radiation effects on Si MOSFETs [13][14][15][16][17][18][19][20]. In this study, the SiC MOSFETs were irradiated with gamma-rays and protons to analyze the radiation effects by evaluating V T , R on , and breakdown voltage (BV).…”

Section: Introductionmentioning

confidence: 99%

Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation

Kim,

Yoon,

Kim

et al. 2024

Electronics

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TID effects occur in MOS-gated transistors in radiation environments where proton and gamma-rays irradiate the devices. TID effects seriously affect the electrical characteristics of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). They can eventually result in the malfunction of power systems when exposed to long-term radiation conditions. We irradiated gamma-rays and protons into 1.2 kV SiC MOSFETs and evaluated the change in electrical properties to analyze the TID’s effects. As a result of the experiment, the threshold voltage (VT) and on-resistance (Ron) of 1.2 kV SiC MOSFETs decreased because positive fixed charges inside the oxide increased depending on the radiation dose of the gamma-ray and fluence of the proton irradiations. The degradation of breakdown voltage (BV) occurred owing to a change in the depletion curvature at the edge of termination regions owing to the trapping of the charge in the field’s oxide.

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“…Therefore, for several applications, it is crucial that semiconductor devices exhibit high operational stability during ionizing radiation. However, conventional silicon-based metal-oxide-semiconductor field-effect transistor (MOSFET) devices exhibit significant performance degradation due to radiation damage of the constituent materials and interfaces. ,, Accordingly, shielding materials such as tantalum or tungsten are commonly applied on these devices for commercial space applications . However, thicker materials are required for protection against high-energy radiation, and this approach conflicts with the idea of sending lightweight systems to outer space.…”

Section: Introductionmentioning

confidence: 99%

In Situ Radiation Hardness Study of Amorphous Zn–In–Sn–O Thin-Film Transistors with Structural Plasticity and Defect Tolerance

Choi

Kang

et al. 2023

ACS Appl. Mater. Interfaces

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Solution-processed metal-oxide thin-film transistors (TFTs) with different metal compositions are investigated for ex situ and in situ radiation hardness experiments against ionizing radiation exposure. The synergetic combination of structural plasticity of Zn, defect tolerance of Sn, and high electron mobility of In identifies amorphous zinc−indium−tin oxide (Zn−In−Sn−O or ZITO) as an optimal radiation-resistant channel layer of TFTs. The ZITO with an elemental blending ratio of 4:1:1 for Zn/In/Sn exhibits superior ex situ radiation resistance compared to In−Ga− Zn−O, Ga−Sn−O, Ga−In−Sn−O, and Ga−Sn−Zn−O. Based on the in situ irradiation results, where a negative threshold voltage shifts and a mobility increase as well as both off current and leakage current increase are observed, three factors are proposed for the degradation mechanisms: (i) increase of channel conductivity, (ii) interface-trapped and dielectric-trapped charge buildup, and (iii) trap-assisted tunneling in the dielectric. Finally, in situ radiation-hard oxide-based TFTs are demonstrated by employing a radiationresistant ZITO channel, a thin dielectric (50 nm SiO 2 ), and a passivation layer (PCBM for ambient exposure), which exhibit excellent stability with an electron mobility of ∼10 cm 2 /V s and aΔV th of <3 V under real-time (15 kGy/h) gamma-ray irradiation in an ambient atmosphere.

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Comparison of effect of 5 MeV proton and Co-60 gamma irradiation on silicon NPN rf power transistors and N–channel depletion MOSFETs

Cited by 13 publications

References 14 publications

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation

In Situ Radiation Hardness Study of Amorphous Zn–In–Sn–O Thin-Film Transistors with Structural Plasticity and Defect Tolerance

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