Comparison of dark current, responsivity and detectivity in different intersubband infrared photodetectors

Abstract

This paper deals with the comparison of quantum well, quantum wire and quantum dot infrared photodetectors (QWIPs, QRIPs and QDIPs, respectively) based on physical analysis of the factors determining their operation. The operation of the devices under consideration is associated with the intersubband (intraband) electron transitions from the bound states in QWs, QRs and QDs into the continuum states owing to the absorption of infrared radiation. The redistribution of the electric potential across the device active region caused by the photoionization of QWs, QRs and QDs affects the electron injection from the emitting contact. The injection current provides the effect of current gain. Since the electron thermoemission and capture substantially determine the electric potential distribution and, therefore, the injection current, these processes are also crucial for the device performance. To compare the dark current, responsivity and detectivity of QWIPs, QRIPs and QDIPs we use simplified but rather general semi-phenomenological formulae which relate these device characteristics to the rates of the thermoemission and photoemission of electrons from and their capture to the QWs and the QR and QD arrays. These rates are expressed via the photoemission cross-section, capture probability and so on, and the structural parameters. Calculating the ratios of the QWIP, QRIP and QDIP characteristics using our semi-phenomenological model, we show that: the responsivity of QRIPs and QDIPs can be much higher than the responsivity of QWIPs, however, higher responsivity is inevitably accompanied by higher dark current; the detectivity of QRIPs and QDIPs with low-density arrays of relatively large QRs and QDs is lower than that of QWIPs; the detectivity of QRIPs and QDIPs based on dense arrays can significantly exceed the detectivity of QWIPs.

Block Diagram Programming of Quantum Dot Sources and Infrared Photodetectors for Gamma Radiation Detection Through VisSim

“…The active region can be either doped (with dopants of the same type as the contact layers) or undoped. Schematic view of vertical QDIPs device structures is in [13]. The absorption of IR is associated with the electron intersubband transitions from bound states in QDs into continuum states above the barriers or into excited quasi-bound states near the barrier top.…”

Comparative study between different quantum infrared photodetectors

“…In photodetectors made of heterostructures with the same material of the contact and barrier layers, the electrons are injected from the emitter to the active region overcoming a potential barrier in the latter formed solely by the space charge. Hence, the electron injection in such photodetectors is of thermionic origin (Ryzhii et al 2004).…”

Terahertz and infrared photodetectors based on multiple graphene layer and nanoribbon structures

“…We develop the device models for MGL and GNR photodiodes and compare their characteristics. We also briefly discuss the MGL and GNR photodiodes potential with that of GNR− −phototransistors [3] and GBL phototran-sistor [4,7] and more traditional photon detectors, particularly, quantum− −well− and quantum−dot−intersubband photodetectors (QWIPs and QDIPs) as well as interband narrow−gap detec− tors [11,12]. As shown, the MGL and GNR photodiodes under consideration can surpass the latter photodetectors in responsivity and detectivity, especially, at elevated tempe− ratures.…”