Comparison of Cu gettering to H+ and He+ implantation-induced cavities in separation-by-implantation-of-oxygen wafers

Zhang, Miao; Lin, Chenglu; Duo, Xinzhong; Lin, Zixin; Zhou, Zhenghua

doi:10.1063/1.369426

Cited by 18 publications

(9 citation statements)

References 19 publications

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“…25,26 Earlier studies have shown that, after 1 h annealing in air at 1000°C, platelets containing oxygen are formed on the remnants of the hydrogen platelets. 13,20 Figure 8 shows the n-type Cz Si after annealing for 1 h at 1000°C.…”

Section: Segregation Of Impuritiesmentioning

confidence: 99%

Transmission electron microscopy study of hydrogen defect formation at extended defects in hydrogen plasma treated multicrystalline silicon

Nordmark

Holmestad

Walmsley

et al. 2009

Journal of Applied Physics

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Hydrogenation of multicrystalline silicon for solar cell applications is considered to be an effective method of increasing the lifetime by passivating defects and impurities. Hydrogen plasma treated as-cut and chemically etched multicrystalline silicon samples have been studied by electron microscopy in order to investigate hydrogen defect formation at extended bulk defects. In chemically etched samples, the texture of the surface after hydrogen plasma treatment differs between different grains depending on grain orientation. In as-cut samples, hydrogen induced defects are formed on sawing defects that extend up to ∼5 μm below the Si surface. Intragranular defects are also observed in the ∼1 μm subsurface region. The density of defects is higher in as-cut samples than in chemically etched samples and the size of the defects increases with depth. Hydrogen induced structural defects on bulk dislocations and on dislocations in twin grain boundaries and stacking faults are found several microns below the sample surface. It is concluded that (i) the passivation efficiency of multicrystalline silicon substrates after H plasma treatment can be limited by the formation of hydrogen induced structural defects and that (ii) such defects can be used to getter unwanted impurities upon high temperature processing of the Si wafers.

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Section: Segregation Of Impuritiesmentioning

confidence: 99%

Transmission electron microscopy study of hydrogen defect formation at extended defects in hydrogen plasma treated multicrystalline silicon

Nordmark

Holmestad

Walmsley

et al. 2009

Journal of Applied Physics

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“…The ''surface'' or areal density of trapped sites on the cavity walls after 1000°C annealing is calculated to be 3.5 ϫ10 15 atoms/cm 2 with an uncertainty of 20%. 15 This value is close to the amount of trapped Cu. No silicide phase is observed in the cavities by XTEM in this study and atomic copper on the cavity walls cannot be directly measured by XTEM.…”

Section: Resultsmentioning

confidence: 55%

“…It is found that high dose He ϩ implantation can generate a wide microcavity band at the projected range without splitting the Si after annealing, while the H ϩ implantation dose range required to form microcavities without surface exfoliation is narrower. In our experiments, microcavities are not observed when the H dose is lower than 3 ϫ10 16 atoms/cm Ϫ2 , but on the other hand, the Si surface will be deformed during annealing if the H dose is higher than 4ϫ10 15 atoms/cm 2 . The XTEM observation demonstrate that the cracking of the H ϩ -implanted silicon is caused by the interaction of H with Si dangling bonds and breakage of the Si-Si bond forming ͑111͒ and ͑110͒ platelets.…”

Section: Discussionmentioning

confidence: 50%

“…13,14 In a separate piece of work, we have demonstrated that a high dose of Cu ͑4ϫ10 15 cm Ϫ2 ) can be removed from the Si overlayer and trapped in the cavities in SIMOX. 15 In order to understand the gettering process and design the optimal experimental protocols, it is very important to study the formation and evolution of the microcavities as well as the related phenomena in H-and He-implanted Si. Some research has been conducted on He ϩ8-10 and H ϩ implantation [16][17][18][19] in Si.…”

Section: Introductionmentioning

confidence: 99%

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Gettering of Cu by microcavities in bonded/ion-cut silicon-on-insulator and separation by implantation of oxygen

Zhang

Zeng

Chu

et al. 1999

Journal of Applied Physics

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Microcavities formed by H+ and He+ implantation and subsequent annealing are effective gettering sites for transition metal impurities in silicon. However, gettering in silicon-on-insulator (SOI) materials is quite different from that in silicon. In this work, we investigate the gettering of Cu to these microcavities in silicon, separation by implantation of oxygen (SIMOX) and bonded/ion-cut SOI wafers. Our data indicate that He+ implantation in the high dose regime (0.2–1×1017 cm−2) creates a wide band of microcavities near the projected range without causing blistering on the sample surface. On the other hand, the implantation dose of H+ needed for stable microcavity formation is relatively narrow (3–4×1016 cm−2), and this value is related to the projected range. The different behavior of H and He in silicon is discussed and He implantation is more desirable with regard to impurity gettering. Cu is implanted into the surface region of the Si and SOI samples, followed by annealing at 700 and 1000 °C. Our results indicate that the microcavities can effectively getter a high dose of Cu (2.5×1015 cm−2) at 700 °C in bulk Si wafer, but higher temperature annealing is needed for the effective gettering in SIMOX. Gettering of Cu by the intrinsic defects at or beneath the buried oxide interface of the SIMOX is observed at 700 °C, but no trapped impurities are observed after 1000 °C annealing in the samples in the presence of microcavities. Almost all of the 1×1014 cm−2 Cu implanted into the Si overlayer of the bonded/ion-cut SOI diffuse through the thermally grown oxide layer and are captured by the cavities in the substrate after annealing at 1000 °C.

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“…The effectiveness of gettering depends on the establishment of gettering sites for absorbing impurities, the diffusion coefficients of the impurities in bulk Si, and the segregation coefficient of the impurities at the gettering sites [6]. An affordable technique for the creation of a defect free zone is the introduction of gettering sites from the wafer backside (ex: backgrinding [7], a layer of liquid aluminum [8], phosphorus diffusion at silicon oxide precipitates in the bulk [9], internal gettering at implantation-induced damage a few microns below the wafer surface [10], Fermi-level effect and heavily doped substrates of epitaxial wafers [11]. The removal of these metallic impurities from active device regions improves device yield, oxide integrity, and other device parameters.…”

Section: Introductionmentioning

confidence: 99%

DRAM memory electrical yield improvement by backgrinding induced backside damage

Kuo¹,

Emoto²,

Tabuchi³

et al. 2006

2006 International Conference on Electronic Materials and Packaging

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This work investigates the electrical yield improvement by backgrinding process on DRAM backside with different wafer grinding technologies. The level of damage present in wafer backside subjected to different grinding technology is characterized. By comparing TEM analysis of strain layer and electrical testing result from samples that had undergone different backgrinding technologies, the most effective suitable processing conditions for the purpose of DRAM yield improvement were determined.

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Comparison of Cu gettering to H+ and He+ implantation-induced cavities in separation-by-implantation-of-oxygen wafers

Abstract: Articles you may be interested inIncreased thickness of buried oxide layer of silicon on insulator in separation by implantation of oxygen with water plasma

Cited by 18 publications

References 19 publications

Transmission electron microscopy study of hydrogen defect formation at extended defects in hydrogen plasma treated multicrystalline silicon

Transmission electron microscopy study of hydrogen defect formation at extended defects in hydrogen plasma treated multicrystalline silicon

Gettering of Cu by microcavities in bonded/ion-cut silicon-on-insulator and separation by implantation of oxygen

DRAM memory electrical yield improvement by backgrinding induced backside damage

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