Comparison of Coupling Methods for Linking Between Reactor and Feature Scales

Abstract

Currently there are two main methods used for coupling macroscopic reactor-scale and microscopic feature-scale models in multi-scale CVD simulation. These methods differ in the plane selected for coupling. With one method, coupling occurs at a source plane offset from the deposition surface, while in the other method coupling occurs on the deposition surface itself. The two methods also have different feature-scale modeling techniques associated with them. A Monte Carlo (MC) technique is used for the source plane-coupling method, while a ballistic transport technique is used for the deposition surface-coupling method. In this study a multi-scale code with a ballistic feature-scale model is modified so that both coupling methods can be applied, allowing for direct comparison of the two coupling methods.

Designing Non‐uniform Wafer Micro‐topography for Macroscopic Uniformity in Multi‐scale CVD Processes

“…This approach is investigated in this work with a multi‐scale modeling framework coupling reactor with feature scale models. Even if there are previous works on coupling a reactor with feature scale models in CVD processes, with two of them including calculations for non‐uniform densities of features on the wafer, the contribution of this work is a design methodology for feature, pattern, device, or die density on the wafer which improves the macroscopic uniformity in CVD processes. Even if it is difficult to practically implement a variation of feature density on the wafer, this work deals with features as they consist the simplest unit cell of topography; the same methodology can be applied to patterns constituting devices or dies on the wafer.…”