Comparison of class-E amplifier with nonlinear and linear shunt capacitance

Suetsugu, Tadashi; Kazimierczuk, Marian K.

doi:10.1109/tcsi.2003.815208

Cited by 103 publications

(48 citation statements)

References 8 publications

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“…Furthermore [20] provides a detailed analysis of the power components parasitics and the effect of their nonlinearities. The basis for this analysis has been, among others, laid in [35], [36] for the analysis of class-E amplifiers, which is fully applicable to class-E based power converters when tuning the rectifier to act as a an ohmic load. The most relevant parasitics of the power switch are the input and output capacitances.…”

Section: B Suboptimal Operationmentioning

confidence: 99%

Evolution of Very High Frequency Power Supplies

Knott

Andersen

Kamby

et al. 2014

IEEE J. Emerg. Sel. Topics Power Electron.

101

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Abstract-The ongoing demand for smaller and lighter power supplies is driving the motivation to increase the switching frequencies of power converters. Drastic increases however come along with new challenges, namely the increase of switching losses in all components. The application of power circuits used in radio frequency transmission equipment helps to overcome those. However those circuits were not designed to meet the same requirements as power converters. This paper summarizes the contributions in recent years in application of very high frequency (VHF) technologies in power electronics, shows results of the recent advances and describes the remaining challenges. The presented results include a self-oscillating gate-drive, air core inductor optimizations, an offline LED driver with a power density of 8.9 W/cm 3 and a 120 MHz, 9 W DC powered LED driver with 89 % efficiency as well as a bidirectional VHF converter. The challenges to be solved before VHF converters can be used effectively in industrial products are within those three categories: components, circuit architectures and reliability testing.

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Section: B Suboptimal Operationmentioning

confidence: 99%

Evolution of Very High Frequency Power Supplies

Knott

Andersen

Kamby

et al. 2014

IEEE J. Emerg. Sel. Topics Power Electron.

101

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“…Nevertheless, his equations were abstract and inapplicable for practical designs using power MOSFET. Tadashi Suetsugu's analysis equations [8,9] were given for a class-E amplifier composed of nonlinear and linear capacitance, which could be applied to real design. In this section, we follow previously obtained results for a class-E amplifier by Tadashi Suetsugu's analysis.…”

Section: Introductionmentioning

confidence: 99%

Design of high PAE class-E power amplifier for wireless power transmission

Ha‐Van

Seo

2014

IEICE Electron. Express

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Practical class-E power amplifier circuits with shunt capacitance have been increasingly exploited in wireless power transmission systems for efficiency enhancement. Most designs, however, have often assumed that the shunt capacitance is linear and the maintainable efficiency in the low power supply has received little attention simultaneously. In this paper, we propose a class-E design with a shunt capacitance composed of nonlinear and linear capacitances, which was implemented and measured with 92.5% PowerAdded Efficiency (PAE) at 13.56 MHz operating frequency and 4 W output power level. In addition, an adaptive bias control circuit that drives the drain voltage of power amplifier was realized to up-hold high PAE at a lower input power range.

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“…1 has been designed following the procedures given in Suetsugu et al [2]. Table 1 gives the component values.…”

Section: Class E Amplifier With Para-sitic and Stray Componentsmentioning

confidence: 99%

“…Class E zero-voltage-switching (ZVS) resonant power amplifiers are very efficient power converters [1,2], which have found applications in radio frequency (RF) power amplification. When operating at a switching frequency in the MHz range and higher, the parasitic (drain-to-source) capacitance of the MOS switch is advantageously utilized as part of the circuit design to achieve the necessary ZVS condition [2].…”

Section: Introductionmentioning

confidence: 99%

“…When operating at a switching frequency in the MHz range and higher, the parasitic (drain-to-source) capacitance of the MOS switch is advantageously utilized as part of the circuit design to achieve the necessary ZVS condition [2]. When implementing such highfrequency amplifier circuits, the presence of the nonlinear device capacitance must be duly taken into account [2].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Study of parasitic and stray components induced ringings in class E power amplifiers in MHz range

Zhang

Wong

Tse

et al.

Proceedings of the 2005 European Conference on Circuit Theory and Design, 2005.

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-For Class E power amplifier circuits operating at switching frequencies of the MHz range or higher, the parasitic capacitance of the MOS transistor switch becomes a significant part of the circuit adding to the usual intended circuit components. For the Class E power amplifier, this is often regarded as an advantage because the parasitic capacitor can be utilized for achieving zero voltage and current switchings, thus reducing the size of an external capacitor which has to be inserted. However, parallel connection of parasitic, stray and external capacitors may give rise to high-frequency ringings of the voltage across the switch, causing the circuit to deviate from the desired Class E operation. In this paper, the phenomenon and its underlying cause is studied by simulations and experiments. A circuit model of the amplifier with parasitic or stray components is developed to explain the phenomenon.

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Comparison of class-E amplifier with nonlinear and linear shunt capacitance

Cited by 103 publications

References 8 publications

Evolution of Very High Frequency Power Supplies

Evolution of Very High Frequency Power Supplies

Design of high PAE class-E power amplifier for wireless power transmission

Study of parasitic and stray components induced ringings in class E power amplifiers in MHz range

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