Comparison of characteristics of thin-film transistor with In₂O₃ and carbon-doped In₂O₃ channels by atomic layer deposition and post-metallization annealing in O₃

Abstract

Characteristics of thin-film transistors (TFTs) with amorphous In2O3 (InO1.2) and carbon-doped In2O3 (InO1.16C0.04) channels by post-metallization annealing (PMA) process were investigated. The InO1.2 TFT changed from metallic to switching behavior after PMA at 200 °C. In contrast, the InO1.16C0.04 TFT exhibited superior properties such as a threshold voltage (V th) of 3.2 V and a high mobility of 20.4 cm2 V−1 s−1 at PMA 150 °C because of the reduction of excess oxygen vacancies. A large negative V th shift was observed for the InO1.2 TFT for 10 800 s in N2 under zero bias voltage while there was no V th change for the InO1.16C0.04 TFT.

A 3D Vertical-Channel Ferroelectric/Anti-Ferroelectric FET With Indium Oxide

“…5nm InOx was grown by ALD at 200℃ and patterned. O3 anneal was applied at 200℃ to reduce oxygen vacancy [20]. S/D metal contacts were formed with 20nm TiN.…”

Direct Analysis of Stacked Au/Ti/In2O3/Al2O3/p+-Si Transport Mechanisms Using Operando Hard X-ray Photoelectron Spectroscopy

“…In this later method, the variation of the deposition temperature can affect the decomposition and reaction of precursors and lead to changes in the film’s properties, including its conductivity, band gap, or structural characteristics. More recently, it has been reported that low-temperature deposited In 2 O 3 films grown by an ALD method showed the presence of impurities, which mainly consisted of carbon . This residual carbon was expected to mitigate the V O 2 + issues, especially observed at 200 °C deposition temperatures.…”

Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InOx:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors

“…μ FE values of 32, 30, and 17 cm 2 V −1 s −1 were reported for the TFTs with a-InO x :Ti, W, and Si channels, respectively [ 13 ]. An atomic layer deposition (ALD) method is also used to form a- or poly-InO x channels for TFTs [ 15 , 16 , 17 , 18 ]. The TFT with a 5 nm thick ALD-deposited carbon-doped a-InO x channel with μ FE of 20.4 cm 2 V −1 s −1 has been demonstrated [ 18 ].…”

“…An atomic layer deposition (ALD) method is also used to form a- or poly-InO x channels for TFTs [ 15 , 16 , 17 , 18 ]. The TFT with a 5 nm thick ALD-deposited carbon-doped a-InO x channel with μ FE of 20.4 cm 2 V −1 s −1 has been demonstrated [ 18 ]. Higher μ FE values of 39.2 and 41.8 cm 2 V −1 s −1 were reported for the TFTs with ultrathin (5 nm) poly-InO x channels formed by plasma- or ozone-assisted ALD followed by postdeposition annealing (PDA).…”

“…A fully depleted poly-InO x TFT with μ FE of 15.3 cm 2 V −1 s −1 was obtained by decreasing the channel thickness to 8 nm. [ 19 ] Most a- and poly-InO x TFTs have been demonstrated with an ultrathin (<10 nm) channel layer [ 13 , 14 , 15 , 16 , 18 , 19 ], in order to fully deplete degenerate InO x channels. However, an ultrathin poly-InO x channel layer limits the μ FE of the TFTs, since the grain size of the film is small.…”