Comparison of bipolar NPN polysilicon emitter interface formation at three different manufacturing sites

Doyle, D.; Barrett, J. Douglas; Lane, W.A.; O'Neill, M.; Bain, D.; Baker, R. Jacob; Mole, P.J.

doi:10.1109/66.149815

Cited by 5 publications

(1 citation statement)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A considerable amount of work has been published in the literature on the effects of the interfacial oxide on the base current [8]- [11] and emitter resistance [4]- [7], [12], [13] of polysilicon emitter contacts. It has been found that the nature of the interfacial oxide is significantly influenced by a number of factors, including the type of ex-situ clean (typically an HF etch) used prior to polysilicon deposition [9], [14], the polysilicon deposition conditions [15], [16], and the subsequent annealing conditions [8]. A common requirement in all the work mentioned above is the need to achieve a well controlled interfacial oxide that gives low values of emitter resistance.…”

Section: Introductionmentioning

confidence: 99%

Impact of ex-situ and in-situ cleans on the performance of bipolar transistors with low thermal budget in-situ phosphorus-doped polysilicon emitter contacts

Rahim

Marsh

Ashburn

et al. 2001

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Abstract-This paper investigates the effects of an in-situ hydrogen bake and an ex-situ hydroflouric acid (HF) etch prior to polysilicon deposition on the electrical characteristics of bipolar transistors fabricated with low thermal budget in-situ phosphorusdoped polysilicon emitter contacts. Emitter contact deposition in a UHV-compatible low pressure chemical vapor deposition (LPCVD) cluster tool is also compared with deposition in a LPCVD furnace. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) are used to characterize the emitter contact material and the interface structure and a comparison is made with Gummel plots and emitter resistances on bipolar transistors. The SIMS results show that an in-situ hydrogen bake in a cluster tool gives an extremely low oxygen dose at the interface of 6.3 10 13 cm 2 , compared with 7.7 10 14 and 2.9 10 15 cm 2 for an ex-situ HF etch and deposition in a cluster tool or a LPCVD furnace, respectively. TEM shows that the in-situ hydrogen bake results in single-crystal silicon with a high density of defects, including dislocations and twins. The ex-situ HF etch gives polycrystalline silicon for deposition in both a cluster tool and a LPCVD furnace. The single-crystal silicon emitter contact has an extremely low emitter resistance of 21 m 2 in spite of the high defect density and the light emitter anneal of 30 s at 900 C. This compares with emitter resistances of 151 and 260 m 2 for the polycrystalline silicon contacts produced using an ex-situ HF etch and deposition in a cluster tool or a LPCVD furnace, respectively. These values of emitter resistance correlate well with the interface oxygen doses and the structure of the interfacial oxide layer. The high defect density in the single-crystal silicon is considered to be due to the high concentration of phosphorus ( 5 10 19 cm 3 ) in the as-deposited layers.Index Terms-Bipolar transistor, cluster tool, in-situ doped polysilicon, polycrystalline silicon, polysilicon, polysilicon emitter.

show abstract

Section: Introductionmentioning

confidence: 99%

Impact of ex-situ and in-situ cleans on the performance of bipolar transistors with low thermal budget in-situ phosphorus-doped polysilicon emitter contacts

Rahim

Marsh

Ashburn

et al. 2001

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

Applications

Kamins

1998

Polycrystalline Silicon for Integrated Circuits and Displays

View full text Add to dashboard Cite

Accurate base and collector current modeling of polysilicon emitter bipolar transistors: Quantification of hole surface recombination velocity

Kizilyalli¹,

Rambaud²,

Ham³

et al. 1996

Journal of Applied Physics

View full text Add to dashboard Cite

We present predictive and accurate modeling of base and collector currents in poly-Si emitter bipolar transistors Ref. . Using a standard 0.8 μm bipolar complementary metal–oxide–semiconductor technology process flow Ref. , numerous experiments are performed. The base and emitter doping profiles are varied intentionally over a wide range in a controlled manner, so as to extract a self-consistent set of apparent band-gap narrowing, minority-carrier mobility, intrinsic concentration parameter, and Auger recombination rate that is valid for simultaneously modeling bipolar transistor base and collector currents. The standard nature of the fabrication process technology chosen for this study allows the results to be more generally applicable. The doping concentrations for physical device simulations are taken directly from secondary-ion-mass spectrometry measurements. These profiles are then verified using spreading resistance measurements and capacitance–voltage measurements. It is shown that the measured base and collector currents for all experiments at room temperature can be fit simultaneously using Klaasen’s unified apparent band-gap narrowing and mobility model Ref. . The emitter poly-Si/epi-Si interface (surface) hole recombination velocity is derived as a function of the emitter implant dose (arsenic concentration in the emitter) consistent with the model mentioned above. Sensitivity of the simulation results to model parameters is shown. It is further shown that the emitter implant dose can be used as a bipolar transistor optimization parameter.

show abstract

Comparison of bipolar NPN polysilicon emitter interface formation at three different manufacturing sites

Cited by 5 publications

References 15 publications

Impact of ex-situ and in-situ cleans on the performance of bipolar transistors with low thermal budget in-situ phosphorus-doped polysilicon emitter contacts

Impact of ex-situ and in-situ cleans on the performance of bipolar transistors with low thermal budget in-situ phosphorus-doped polysilicon emitter contacts

Applications

Accurate base and collector current modeling of polysilicon emitter bipolar transistors: Quantification of hole surface recombination velocity

Contact Info

Product

Resources

About