Comparison of amorphous/crystalline heterojunction solar cells based on n- and p-type crystalline silicon

Tucci, M.; Noce, M. Della; Bobeico, E.; Roca, F.; Cesare, G. de; Palma, F.

doi:10.1016/j.tsf.2003.11.012

Cited by 42 publications

(19 citation statements)

References 13 publications

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“…Further work is needed to find out whether there are fundamental reasons, apart from those mentioned in section 3, for the observed deviation in results on p-and n-type wafers [124,125]. We note here that by using an epitaxially grown n-type emitter passivated with a-Si:H, IBM, USA demonstrated solar cells on p-type FZ wafers with efficiencies in excess of 20% [126].…”

Section: Device Resultsmentioning

confidence: 96%

High-efficiency Silicon Heterojunction Solar Cells: A Review

Wolf

Descoeudres

Holman

et al. 2012

Green

750

352

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Abstract. Silicon heterojunction solar cells consist of thin amorphous silicon layers deposited on crystalline silicon wafers. This design enables energy conversion efficiencies above 20% at the industrial production level. The key feature of this technology is that the metal contacts, which are highly recombination active in traditional, diffused-junction cells, are electronically separated from the absorber by insertion of a wider bandgap layer. This enables the record open-circuit voltages typically associated with heterojunction devices without the need for expensive patterning techniques. This article reviews the salient points of this technology. First, we briefly elucidate device characteristics. This is followed by a discussion of each processing step, device operation, and device stability and industrial upscaling, including the fabrication of solar cells with energyconversion efficiencies over 21%. Finally, future trends are pointed out.

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Section: Device Resultsmentioning

confidence: 96%

High-efficiency Silicon Heterojunction Solar Cells: A Review

Wolf

Descoeudres

Holman

et al. 2012

Green

750

352

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“…This will result in a different carrier transport in n-and p-type heterojunction solar cells due to the different band structure seen by minority carriers [24], [25]. Under device-operating conditions (similar to a high-bias regime), however, the a-Si:H/c-Si interface defect density was shown to be the limiting factor for solar cell performance [3], [23]- [26]. Suppressing the defect states at the interfaces is indeed the key to efficient transport and high V oc and FF values, whereas band structures may play only a minor role [25].…”

Section: A Effect Of the Wafer Doping Type And Emitter Position On Smentioning

confidence: 99%

>21% Efficient Silicon Heterojunction Solar Cells on n- and p-Type Wafers Compared

Descoeudres

Holman

Barraud

et al. 2013

IEEE J. Photovoltaics

196

127

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Abstract-The properties and high-efficiency potential of frontand rear-emitter silicon heterojunction solar cells on n-and p-type wafers were experimentally investigated. In the low-carrierinjection range, cells on p-type wafers suffer from reduced minority carrier lifetime, mainly due to the asymmetry in interface defect capture cross sections. This leads to slightly lower fill factors than for n-type cells. By using high-quality passivation layers, however, these losses can be

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“…3. Table 2 shows the experimental data of heterojunction solar cells derived from the illuminated current-voltage characteristics, also established by Tucci et al [10]. The different photovoltaic parameters observed for different values of D i in this study are summarized in Table 2.…”

Section: Effect Of the Interface State Density On The Photovoltaic Pamentioning

confidence: 69%

“…Figure 2 plots the EQE calculated for different values of interface state density D i . The value of recombination veloc- [10] are presented in the same figure In our study, we have used the experimentally measured front reflectance of ZnO R(λ) as a dotted line [21].…”

Section: Effect Of the Interface State Density On The Eqementioning

confidence: 99%

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Analytical study of a-Si:H/c-Si thin heterojunction solar cells with back surface field

Krichen

Arab

2015

J Comput Electron

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In this paper, the high efficiency TCO-n(aSi:H)-i(aSi:H)-p(c-Si)-p + (aSi:H) heterojunction with intrinsic thin-layer (HIT) solar cell is analyzed. The effects of the intrinsic thin-layer and the back surface field (BSF) on the photovoltaic parameters of thin solar cells are discussed. The analytical results show that the intrinsic layer inserted at the a-Si:H/c-Si interface decreases the density of interface states. If the interface state density is lower than 10 11 cm −2 in the presence of an intrinsic thin layer a-Si:H, the effect of recombination current density on the photovoltaic parameters becomes low. The BSF formed by hydrogenated amorphous silicon layer can increase the conversion efficiency by about 2.6 % and the open-circuit voltage to ∼80 mV as compared to the HIT solar cell wherein the BSF is realized by crystalline silicon. The results obtained from the simulation studies are in good agreement with the literature, and might open promising opportunities for enhancing the design parameters of HIT cells. Interface state density α c−Si (α a−Si ) Absorption coefficient in the c-Si (aSi:H) φ (λ) Incident photon flux R (λ) Reflection coefficient at the front surface H Cell thickness W B Base thickness S p (S n ) Recombination velocity at the front (back) contact V th Thermal velocity J ph,T (λ) Total photocurrent density J 0D Reverse saturation current density in the emitter and base region J 0Rb Recombination current density in the bulk J 0Ri Recombination current density at the heterojunction interface J sc Short-circuit current density V oc Open-circuit voltage η Cell efficiency FF Fill factor P in Power density output R s (R sh ) Series (shunt) resistance 123 J Comput Electron

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Comparison of amorphous/crystalline heterojunction solar cells based on n- and p-type crystalline silicon

Cited by 42 publications

References 13 publications

High-efficiency Silicon Heterojunction Solar Cells: A Review

High-efficiency Silicon Heterojunction Solar Cells: A Review

>21% Efficient Silicon Heterojunction Solar Cells on n- and p-Type Wafers Compared

Analytical study of a-Si:H/c-Si thin heterojunction solar cells with back surface field

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