Comparison of AlGaN/GaN MSM Varactor Diodes Based on HFET and MOSHFET Layer Structures

Marso, Michel; Fox, A.; Heidelberger, G.; Kordoš, P.; Lüth, H.

doi:10.1109/led.2006.886705

Cited by 31 publications

(20 citation statements)

References 8 publications

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“…These results are similar to the capacitance-voltage (C-V) properties of the SiO 2 -passivated MSM varactor in Marso's report [8]. Furthermore, the capacitance of varactors decrease considerably while dielectric films such as Gd 2 O 3 and Si 3 N 4 etc.…”

Section: Resultssupporting

confidence: 86%

“…We obtain the maximum capacitance (C MAX ) as 84. 8,191, 317, and 651 pF, for electrode areas 37922, 85224, 151122, and 236472 μm 2 , respectively. On the other hand, when the bias voltage is greater than V T , the depletion zone penetrates the 2DEG channel to create an additional small lateral 2DEG capacitance (C 2DEG ) in series with C Schottky .…”

Section: Resultsmentioning

confidence: 99%

“…The capacitances of varactors increase with the electrode area, simultaneously, the capacitance ratios (C MAX / C MIN ) increase. These varactor (a) from Marso's report [8], (b) the samples prepared in this study. measurement results match the theory that the capacitances of varactors are determined by the electrode area.…”

Section: Resultsmentioning

confidence: 99%

“…1 (a) shown [7][8]. The SiO 2 insulator can also lower the capacitance ratio and the stability of capacitance-voltage (C-V) properties of MSM-2DEG varactors [8].…”

Section: Introductionmentioning

confidence: 99%

“…1 (a) shown [7][8]. The SiO 2 insulator can also lower the capacitance ratio and the stability of capacitance-voltage (C-V) properties of MSM-2DEG varactors [8]. Our aim is to investigate whether an AlGaN / GaN MSM-2DEG varactor with a different dielectric film will exhibit C-V characteristics similar to that of a device with SiO 2 film.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Capacitance Swing and Capacitance Ratio of GaN-Based Metal-Semiconductor-Metal Two-Dimensional Electron Gas Varactor with Different Dielectric Films

Tien¹,

Kuei²,

Chang³

et al. 2015

Journal of Electrical Engineering and Technology

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-The performance of the AlGaN/GaN MSM-2DEG varactor with different dielectric films deposited by the E-beam deposition is investigated in detail. The capacitance swing and the capacitance ratio of the varactor without dielectric film as well as with, SiO 2 , Gd 2 O 3 , and Si 3 N 4 films, respectively, are determined by electrodes of varying areas. The maximum capacitance, the minimum capacitance and the capacitance ratios are proportional to the increasing of the electrode areas. The capacitance ratio determined by the maximum and the minimum capacitance is found to be 18.35 (with Si 3 N 4 dielectric film) and 149.51 (without dielectric film), respectively. The transition voltages of the fabricated varactors are almost the same for a bias voltage of about ±5 V and leakage current can be lower three orders of magnitude while the varactors with dielectric films. The tunability of the capacitance ratio makes the AlGaN/GaN MSM-2DEG varactor with a dielectric film highly useful in multirange applications of a surge free preamplier.

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Section: Resultssupporting

confidence: 86%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

“…1 (a) shown [7][8]. The SiO 2 insulator can also lower the capacitance ratio and the stability of capacitance-voltage (C-V) properties of MSM-2DEG varactors [8].…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Capacitance Swing and Capacitance Ratio of GaN-Based Metal-Semiconductor-Metal Two-Dimensional Electron Gas Varactor with Different Dielectric Films

Tien¹,

Kuei²,

Chang³

et al. 2015

Journal of Electrical Engineering and Technology

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GaN microwave varactors with insulated electrodes

Gaevski

Deng

Gaška

et al. 2014

Phys. Status Solidi C

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We report on GaN microwave varactors with capacitively coupled isolated electrodes. Metal‐insulator‐semiconductor (MIS) varactors have 4–5 orders of magni‐tude lower leakage currents than similar devices with Schottky contacts. Low leakage capacitively coupled contacts enable microwave switches and power limiters with low loss, high RF power and excellent temperature stability up to at least 200 °C. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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High-Sensitivity Nitride-Based Ultraviolet Photosensors with a Low-Temperature AlGaN Interlayer

Lee

Chang

et al. 2009

Journal of Elec Materi

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Nitride-based ultraviolet (UV) photosensors with a low-temperature (LT) AlGaN interlayer were fabricated and characterized. Material analysis results showed that dark pits corresponding to threading dislocation (TD) terminations were almost invisible after inserting the LT AlGaN interlayer. It was also found that we could significantly suppress the dark leakage current by using the LT AlGaN interlayer owing to TD annihilation and demultiplication processes. For photosensors with the LT AlGaN interlayer, the responsivity at 360 nm and UV-to-visible rejection ratio were found to be 0.12 A/W and 2.45 9 10 3 , respectively, under 5 V applied bias.

show abstract

Comparison of AlGaN/GaN MSM Varactor Diodes Based on HFET and MOSHFET Layer Structures

Cited by 31 publications

References 8 publications

Capacitance Swing and Capacitance Ratio of GaN-Based Metal-Semiconductor-Metal Two-Dimensional Electron Gas Varactor with Different Dielectric Films

Capacitance Swing and Capacitance Ratio of GaN-Based Metal-Semiconductor-Metal Two-Dimensional Electron Gas Varactor with Different Dielectric Films

GaN microwave varactors with insulated electrodes

High-Sensitivity Nitride-Based Ultraviolet Photosensors with a Low-Temperature AlGaN Interlayer

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