Comparison of AlGaN/GaN HEMTs grown and fabricated on sapphire substrate with AIN and GaN nucleation layers

Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study

“…Besides, the AlN nucleation layer or multiple layers of AlN and AlGaN with varying concentrations of Al forming a transition scheme are necessary to reduce the lattice mismatch for GaN grown on Si [24,25]. Despite low-TC (42 W/m-K at RT), many research-groups have recently demonstrated the outstanding performance of the GaN-material based devices with the sapphire substrate [23][24][25][26][27][28][29][30][31][32]. Therefore, sapphire has become an excellent choice as a substrate due to its high crystalline quality, lattice constant matching with GaN, low cost of wafers, and availability in larger wafer sizes.…”