Comparison of a-Si TFTs fabricated by Cat-CVD and PECVD methods

Nishizaki, Shogo; Ohdaira, Keisuke; Matsumura, Hideki

doi:10.1016/j.tsf.2009.01.026

Cited by 23 publications

(21 citation statements)

References 8 publications

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“…In addition, the superiority of Cat-CVD aSi TFT to PECVD one is revealed by systematic study of the characteristics of both TFT's. There is a possibility to obtain high performance a-Si TFT equivalent to poly-Si TFT, the details of which are reported elsewhere [30].…”

Section: Contents Lists Available At Sciencedirectmentioning

confidence: 99%

New application of Cat-CVD technology and recent status of industrial implementation

Matsumura

Ohdaira

2009

Thin Solid Films

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Section: Contents Lists Available At Sciencedirectmentioning

confidence: 99%

New application of Cat-CVD technology and recent status of industrial implementation

Matsumura

Ohdaira

2009

Thin Solid Films

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“…Nishizaki et al [19] showed that a-Si TFTs made with HWCVD, show high stability upon bias stressing and that the threshold voltage shift is due to charge trapping in the SiN x only. To quantify trapped charges and to optimize our HWCVD SiN x deposited at high deposition rates (~3 nm/s), we determined the mechanical stress, the root-mean-square (rms) roughness and the dielectric properties including fixed and trapped charges of our HWCVD SiN x for various compositions.…”

Section: Thin Film Transistors By Hot Wire Cvdmentioning

confidence: 99%

Potential of Hot Wire CVD for Active Matrix TFT Manufacturing

2009

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Hot Wire Chemical Vapor Deposition (HWCVD) is a fast deposition technique with high potential for homogeneous deposition of thin films on large area panels or on continuously moving substrates in an in-line manufacturing system. As there are no high-frequency electromagnetic fields, scaling up is not hampered by finite wavelength effects or the requirement to avoid inhomogeneous electrical fields. Since 1996 we have been investigating the application of the HWCVD process for thin film transistor manufacturing. It already appeared then that these Thin Film Transistors (TFTs) were electronically far more stable than those with Plasma Enhanced (PE) CVD amorphous silicon. Recently, we demonstrated that very compact SiN x layers can be deposited at high deposition rates, up to 7 nm/s. The utilization of source gases in HWCVD of a-Si 3 N 4 films deposited at 3 nm/s is 75 % and 7 % for SiH 4 and NH 3 , respectively. Thin films of stoichiometric a-Si 3 N 4 deposited at this rate have a high mass-density of 3.0 g/cm 3 . The dielectric properties have been evaluated further in order to establish their suitability for incorporation in TFTs. Now that all TFT layers, namely, the SiN x insulator, the a-Si:H or µc-Si:H layers, and the n-type doped thin film silicon can easily be manufactured by HWCVD, the prospect of "all HWCVD" TFTs for active matrix production is within reach. We tested the 3 nm/s SiN x material combined with our protocrystalline-Si:H layers deposited at 1 nm/s in 'all HW' TFTs. Results show that the TFTs are state of the art with a field-effect mobility of 0.4 cm 2 /Vs. In order to assess the feasibility of large area deposition we are investigating in-line HWCVD for displays and solar cells.

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“…12 Silane (SiH 4 ) and disilane (Si 2 H 6 ) have been used as thinfilm precursors 1,13−15 in industry, dopant precursors in III−V composite semiconductors, and in deposition of epitaxial layers of Si, 16,17 Si 1−x Ge x , 18,19 and SiC. 20 A well-established mechanism is the dissociation of the SiH 4 and Si 2 H 6 species into Si x H y (x = 1−2; y = 1−5) fragments resulting in Si thinfilm growth with release of hydrogen atoms and molecules. 21−32 However, abundant hydrogen atoms in the gas phase can further react with the adsorbed Si x H y species by hydrogen-abstraction and addition−elimination processes, giving different pathways as follows: 48 form for the generalized gradient approximation (GGA) exchange correlation functional with a plane wave basis set is carried out during the calculations.…”

Section: ■ Introductionmentioning

confidence: 99%

Computational Study for Reactions of H Atoms with Adsorbed SiH₃ and Si₂H₅ on H-Covered Si(100)-(2 × 1) Surface

Chen

Huang

2014

J. Phys. Chem. C

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Density functional theory calculations with spin-polarization effect were employed to illustrate the adsorption of Si x H y (x = 1−2; y = 1−5) species and the reactions of H atoms with adsorbed SiH x (x = 1−3) and Si 2 H 5 species on the H-covered Si(100)-(2 × 1) surface. The configurations and energies of these adsorbates were elucidated. It was found that H vacancy sites can be easy created by SiH 3 and Si 2 H 5 radicals with small barriers (2.1 and 1.6 kcal/mol for SiH 3 and Si 2 H 5 , respectively). The Si 2 H 5 , Si 2 H 4 , SiHSiH 3 , SiH 3 , SiH 2 , SiH, and Si radials interact with the surface more forcefully than the Si 2 H 6 and SiH 4 molecules. Potential energy surfaces for the reaction mechanisms of H + SiH x (a) and H + Si 2 H 5 (a) were mapped by using the nudged elastic band method. The calculation results demonstrate that the most favorable pathway is hydrogen abstraction leading to the production of H 2 and Si x H y (x = 1−2; y = 0−4) because of their low barriers and high exothermicities. Rate constant calculations were performed to study the kinetic behavior for simulation of silicon thin-film growth by chemical vapor deposition processes.

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Comparison of a-Si TFTs fabricated by Cat-CVD and PECVD methods

Cited by 23 publications

References 8 publications

New application of Cat-CVD technology and recent status of industrial implementation

New application of Cat-CVD technology and recent status of industrial implementation

Potential of Hot Wire CVD for Active Matrix TFT Manufacturing

Computational Study for Reactions of H Atoms with Adsorbed SiH₃ and Si₂H₅ on H-Covered Si(100)-(2 × 1) Surface

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Comparison of a-Si TFTs fabricated by Cat-CVD and PECVD methods

Cited by 23 publications

References 8 publications

New application of Cat-CVD technology and recent status of industrial implementation

New application of Cat-CVD technology and recent status of industrial implementation

Potential of Hot Wire CVD for Active Matrix TFT Manufacturing

Computational Study for Reactions of H Atoms with Adsorbed SiH3 and Si2H5 on H-Covered Si(100)-(2 × 1) Surface

Contact Info

Product

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Computational Study for Reactions of H Atoms with Adsorbed SiH₃ and Si₂H₅ on H-Covered Si(100)-(2 × 1) Surface