Comparison between various structures of dilute-nitride InGaAsN quantum well lasers in terms of their main electronic properties

Abstract

In the last two decades, quantum well (QW) lasers have been used for a wide range of applications at wavelengths spanning on a very large domain and based on various material systems. A very interesting such material system is InGaAsN with dilute-nitride. We performed a comparison, by means of LASTIP simulations, between several structures of QW lasers based on this alloy, with the purpose of finding the laser structure which constitutes the best choice for being applied in practical situations with the most convenient performance parameters required in every case.