Comparison between the different implantation orders in H⁺and He⁺coimplantation

Abstract

H + and He + were implanted into single crystals in different orders (H + first or He + first). Subsequently, the samples were annealed at different temperatures from 200 • C to 450 • C for 1 h. Cross sectional transmission electron microscopy, Rutherford backscattering spectrometry and channelling, elastic recoil detection were employed to characterize the defects and the distribution of H and He in the samples. Furthermore, the positron traps introduced by ion implantation and annealing were characterized by slow positron annihilation spectroscopy. Both orders in the coimplantation of H and He have the ability to decreases the total implantation dose after annealing. No bubbles or voids but cracks and platelets, were observed by cross sectional transmission electron microscopy. The different implantation orders affect the density of interstitial atoms and positron traps.

Post-annealing temperature dependence of blistering in high-fluence ion-implanted H in Si 〈100〉

“…Although the as-annealed hydrogen concentration tends to decrease to some extent when compared to the as-implanted one, the remaining hydrogen atoms are trapped deeply in the bulk as T a increases. This finding is consistent with the similar findings in other studies [8,27,28]. Remarkably, the hydrogen-trapping phenomenon also confirms the fact that more transformations of the VH 3 (or V 2 H 6 ) defect complex phase into the Si(1 0 0):H bonding configuration phase occur at higher post-annealing temperatures as shown in Fig.…”

“…In other words, a threshold ion fluence (e.g. 4 Â 10 16 cm À2 in the 30 keV implant [8]) is definitely needed in order to initialize blister formation. As stated above, the behaviors of blister formation and growth are strongly dependent on (1) hydrogen diffusion limited by trapping-detrapping and (2) free atomic diffusion Table 1 K-value of Raman intensities; total amount, average diameter, covered-area fraction of optically-detectable blisters; hydrogen-trapping depth, and oxygengettering depth as a function of post-annealing temperature in 40 keV 5 Â 10 16 cm À2 and 100 keV 5 Â 10 16 cm À2 implants of hydrogen.…”

“…detrapping phenomenon). Although some researches have extensively explored both the physical and chemical interactions of the implanted hydrogen ions in the silicon substrate such as those shown in [8] among others, very few studies have been conducted on the key issues regarding blister formation and growth in relation to variations of the VH 3 (or V 2 H 6 ) defect complex and Si:H bonding configuration phases as well as the hydrogen and oxygen depth profiles against the post-annealing treatments especially postannealing temperature. For this reason, an in-depth investigation of these key issues will give a well understanding of the mechanisms behind the smart cut technique and thus constitutes the objective of this study.…”

Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions

“…The implantation order also affects exfoliation efficiency. Duo et al argued [15] that it is efficient to exfoliate surfaces in samples implanted with hydrogen first. On the contrary, Nguyen et al [16] considered that it can significantly enhance damage production during the first H implantation, leading to suppression of exfoliation.…”

Surface exfoliation and defect structures in Si induced by 160keV He and 110keV H ion implantation

“…Meanwhile, the combination of He and H implantation also results in the significant reduction of the total fluence necessary to obtain layer transfer. In addition, change of the implantation sequence of He and H may affect the behavior of the implantation induced point defect complexes [10].…”