2016
DOI: 10.1016/j.jcrysgro.2016.08.001
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Comparison between numerical modeling and experimental measurements of the interface shape in Kyropoulos growth of Ti-doped sapphire crystals

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Cited by 19 publications
(6 citation statements)
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“…They are many differences in the growing process between Czochralski and Kyropoulos. The crystallization takes place in the melt with a highly convex crystallization interface [31]. This interface shape coupled with the segregation effect induces is responsible to a strong gradient of Ti concentration in the crystal [32].…”
Section: Discussionmentioning
confidence: 99%
“…They are many differences in the growing process between Czochralski and Kyropoulos. The crystallization takes place in the melt with a highly convex crystallization interface [31]. This interface shape coupled with the segregation effect induces is responsible to a strong gradient of Ti concentration in the crystal [32].…”
Section: Discussionmentioning
confidence: 99%
“…The finite element software COMSOL-Multiphysics® was used for modelling the Kyropoulos growth of the Ti-doped sapphire crystals of interest. The model and the results are already published, in terms of temperature field and solid-liquid interface shape [28], Ti segregation [29] and stresses in the growing crystal. The reader may refer to figure 3 in [30] where a von Mises stress map in the growing crystal is shown, as well as stress variation along the crystal radius at several crystal lengths.…”
Section: Numerical Modelling Of Stresses In the Growing Crystalmentioning
confidence: 99%
“…The heat removed at the growth interface due to the crystal pulling and, respectively, the latent heat released during the solidification process, are included in the present model. More details about the numerical model are given in our previous works …”
Section: Model Descriptionmentioning
confidence: 99%