Comparison between e-beam direct write and immersion lithography for 20nm node

Abstract

E-beam Direct Write (EBDW) process window simulations were performed on critical layers in Altera designs of the 20 nm node (minimum metal half-pitch 32 nm). For selected layout clips, a direct comparison is made with 193i simulation results.Local Interconnect and Via0 (single patterning) and Metal1 (Litho-Etch-Litho-Etch (LELE) double patterning) layers are considered. The EBDW dose latitude was found to exceed that of the 193i process by a factor 4.As the electron beam total spot size is of the order of the Critical Dimension (CD) for the considered node, interplay between neighboring features is low. This results in straightforward data preparation with typically 2 kernels and 'clean' process windows. The latter are mainly limited by Edge Placement Errors of Line Ends. The curves for the various simulation sites roughly overlap, as opposed to the 193i case in which they differ significantly.In EBDW the performance of square vias equals that of rectangular vias, enabling a denser via packing.The research leading to these results has been performed in the frame of the industrial collaborative consortium IMAGINE driven by CEA-Leti.

Novel Rinse Material to Improve EUV Lithography Performance

“…Extreme Ultraviolet (EUV) lithography, Directed Self-Assembly (DSA), Electron beam (E-beam) lithography and multi patterning technology of ArF immersion lithography are being investigated for advanced node devices [1][2][3][4].…”