Abstract:Power electronic devices like Insulated Gate Bipolar Transistors (IGBTs) and diodes are often characterized by power densities and dimensions that could result in very high heat flux densities. In order to guarantee the expected performance and lifetime for these components, dedicated active cooling devices are usually adopted. In the present paper, the comparison between two different cooling strategies for power electronics is presented: fractal-channel design and submerged impinging jets. Each cooling strat… Show more
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