Comparison between Al&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt; thin films grown by ALD using H&lt;inf&gt;2&lt;/inf&gt;O or O&lt;inf&gt;3&lt;/inf&gt; as oxidant source

Campabadal, F.; Beldarrain, O.; Zabala, M.; Acero, M.C.; Rafı́, J.M.

doi:10.1109/sced.2011.5744238

Cited by 8 publications

(11 citation statements)

References 16 publications

(18 reference statements)

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“…In agreement with previous results on thinner layers, the effect of a PMA treatment is found to decrease the density of negative effective trapped charges [31], as well as to significantly reduce C-V hysteresis [32,33] and interface states density [22,34]. This can be appreciated in Fig.…”

Section: Non-irradiated Devicessupporting

confidence: 92%

“…In the present study, a PMA has also been found to significantly reduce any wafer level variability of C-V and I-V characteristics. This can be appreciated in [31,35,36], which has been attributed to a higher O/Al ratio at the semiconductor/dielectric interface for O3-grown films, together with the fact that aluminum vacancies and oxygen interstitials are believed to introduce negative fixed charge levels within Al2O3 bandgap [4,5]. As shown in Table 2 results, and in further agreement with previous studies [36,37], the Neff differences between ALD Al2O3 layers grown with O3 and H2O as oxidant source diminish after the PMA thermal treatment, which may be explained in terms of an interfacial restructure [37].…”

Section: Non-irradiated Devicesmentioning

confidence: 93%

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Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Rafı́

Pellegrini

Fadeyev

et al. 2016

Solid-State Electronics

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The radiation hardness and thermal stability of the electrical characteristics of atomic layer deposited Al2O3 layers to be used as passivation films for silicon radiation detectors with slim edges are investigated. To directly measure the interface charge and to evaluate its change with the ionizing dose, metal-oxide-silicon (MOS) capacitors implementing differently processed Al2O3 layers were fabricated on p-type silicon substrates. Qualitatively similar results are obtained for degradation of capacitance-voltage and current-voltage characteristics under gamma and proton irradiations up to equivalent doses of 30 Mrad and 21.07 Mrad, respectively. While similar negative charge densities are initially extracted for all non-irradiated capacitors, superior radiation hardness is obtained for MOS structures with alumina layers grown with H2O instead of O3 as oxidant precursor. Competing effects between radiation-induced positive charge trapping and hydrogen release from the H2Ogrown Al2O3 layers may explain their higher radiation resistance. Finally, irradiated and nonirradiated MOS capacitors with differently processed Al2O3 layers have been subjected to thermal treatments in air at temperatures ranging between 100ºC and 200ºC and the thermal stability of their electrical characteristics has been evaluated. Partial recovery of the gamma-induced degradation has been noticed for O3-grown MOS structures. This can be explained by a trapped holes emission process, for which an activation energy of 1.38 ± 0.15 eV has been extracted.

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Section: Non-irradiated Devicessupporting

confidence: 92%

Section: Non-irradiated Devicesmentioning

confidence: 93%

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Rafı́

Pellegrini

Fadeyev

et al. 2016

Solid-State Electronics

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“…The growth rate of Al 2 O 3 was between 1.9–2.3 nm/cycle in the deposition temperature range of 200 °C–300 °C with a 20 s pulse time, thus 200 °C was selected in further experiments (Figure S4). The thickness and growth rate were found to be much higher than previously reported values (0.1 nm/cycle) [34,35,36,37,38,39] indicating a combination of ALD and CVD-like growth. One likely explanation is that the dose time of ATSB was too long for the purge time used, therefore the ATSB dose time was reduced from 20 s to 2.5 s with the aim to avoid CVD-like growth.…”

Section: Resultscontrasting

confidence: 73%

Use of a New Non-Pyrophoric Liquid Aluminum Precursor for Atomic Layer Deposition

et al. 2019

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An Al2O3 thin film has been grown by vapor deposition using different Al precursors. The most commonly used precursor is trimethylaluminum, which is highly reactive and pyrophoric. In the purpose of searching for a more ideal Al source, the non-pyrophoric aluminum tri-sec-butoxide ([Al(OsBu)3], ATSB) was introduced as a novel precursor for atomic layer deposition (ALD). After demonstrating the deposition of Al2O3 via chemical vapor deposition (CVD) and ‘pulsed CVD’ routes, the use of ATSB in an atomic layer deposition (ALD)-like process was investigated and optimized to achieve self-limiting growth. The films were characterized using spectral reflectance, ellipsometry and UV-Vis before their composition was studied. The growth rate of Al2O3 via the ALD-like process was consistently 0.12 nm/cycle on glass, silicon and quartz substrates under the optimized conditions. Scanning electron microscopy and transmission electron microscopy images of the ALD-deposited Al2O3 films deposited on complex nanostructures demonstrated the conformity, uniformity and good thickness control of these films, suggesting a potential of being used as the protection layer in photoelectrochemical water splitting.

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“…The reports on atomic layer depositions of Al 2 O 3 and Ga 2 O 3 have shown that H 2 O is a suitable oxidizer for Al 2 O 3 deposition, but not for Ga 2 O 3 . Although O 3 is suitable for deposition of both oxides, − our preliminary experiments determined that longer pulse times were required to complete the reaction with O 3 as the sole oxidant. The slow reaction time may be attributed to the low deposition temperature and a low ozone partial pressure within the reactor.…”

Section: Resultsmentioning

confidence: 76%

Atomic Layer Deposition of Al₂O₃–Ga₂O₃ Alloy Coatings for Li[Ni_0.5Mn_0.3Co_0.2]O₂ Cathode to Improve Rate Performance in Li-Ion Battery

Laskar

Jackson

Guan

et al. 2016

ACS Appl. Mater. Interfaces

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Metal oxide coatings can improve the electrochemical stability of cathodes and hence, their cycle-life in rechargeable batteries. However, such coatings often impose an additional electrical and ionic transport resistance to cathode surfaces leading to poor charge-discharge capacity at high C-rates. Here, a mixed oxide (Al2O3)1-x(Ga2O3)x alloy coating, prepared via atomic layer deposition (ALD), on Li[Ni0.5Mn0.3Co0.2]O2 (NMC) cathodes is developed that has increased electron conductivity and demonstrated an improved rate performance in comparison to uncoated NMC. A "co-pulsing" ALD technique was used which allows intimate and controlled ternary mixing of deposited film to obtain nanometer-thick mixed oxide coatings. Co-pulsing allows for independent control over film composition and thickness in contrast to separate sequential pulsing of the metal sources. (Al2O3)1-x(Ga2O3)x alloy coatings were demonstrated to improve the cycle life of the battery. Cycle tests show that increasing Al-content in alloy coatings increases capacity retention; whereas a mixture of compositions near (Al2O3)0.5(Ga2O3)0.5 was found to produce the optimal rate performance.

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Comparison between Al<inf>2</inf>O<inf>3</inf> thin films grown by ALD using H<inf>2</inf>O or O<inf>3</inf> as oxidant source

Cited by 8 publications

References 16 publications

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Use of a New Non-Pyrophoric Liquid Aluminum Precursor for Atomic Layer Deposition

Atomic Layer Deposition of Al₂O₃–Ga₂O₃ Alloy Coatings for Li[Ni_0.5Mn_0.3Co_0.2]O₂ Cathode to Improve Rate Performance in Li-Ion Battery

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Comparison between Al<inf>2</inf>O<inf>3</inf> thin films grown by ALD using H<inf>2</inf>O or O<inf>3</inf> as oxidant source

Cited by 8 publications

References 16 publications

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Use of a New Non-Pyrophoric Liquid Aluminum Precursor for Atomic Layer Deposition

Atomic Layer Deposition of Al2O3–Ga2O3 Alloy Coatings for Li[Ni0.5Mn0.3Co0.2]O2 Cathode to Improve Rate Performance in Li-Ion Battery

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Product

Resources

About

Atomic Layer Deposition of Al₂O₃–Ga₂O₃ Alloy Coatings for Li[Ni_0.5Mn_0.3Co_0.2]O₂ Cathode to Improve Rate Performance in Li-Ion Battery