Comparison and combination of several stress relief methods for cubic boron nitride films deposited by ion beam assisted deposition

Fan, Yujie; Zhang, X.W.; You, Jingbi; Hui‐min, Tan; Chen, N.F.

doi:10.1016/j.surfcoat.2008.11.021

Cited by 11 publications

(7 citation statements)

References 35 publications

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“…21 Here, a small strip of undoped Si was attached onto the pure boron target for in situ doping. The B target and Si wafer were cosputtered by Ar + ions supplied from the first source with a typical energy of a͒ Electronic mail: xwzhang@semi.ac.cn.…”

Section: Methodsmentioning

confidence: 99%

Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering

Jiang

Zhang

Yin

et al. 2011

Journal of Applied Physics

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Si-doped cubic boron nitride (c-BN) films with various Si concentrations were achieved by in situ cosputtering during ion beam assisted deposition. Effects of the Si concentration and rapid thermal annealing (RTA) conditions on the electrical transport properties of Si-doped c-BN thin films were investigated systematically. The results suggest that the optimum RTA condition is at the temperature of 1000 °C for 3 min. The resistance of Si-doped c-BN films gradually decreases as the Si concentration increases, indicating an electrical doping effect of the Si impurity. The temperature dependent electrical conductivity of the Si-doped c-BN films suggests that different conduction mechanisms are dominant over the different temperature ranges. Based on the Davis–Mott model, we propose that the extended-state conduction, band tail-state conduction and short-range hopping conduction are responsible for the respective temperature ranges. In addition, the reduction in activation energy of Si impurities is observed as the Si concentration increases.

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Section: Methodsmentioning

confidence: 99%

Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering

Jiang

Zhang

Yin

et al. 2011

Journal of Applied Physics

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“…[24][25][26] Adding a small amount of Si into c-BN films has been observed to be effective to reduce the stress as well as the resistance. [27,28] Recently, it was suggested that adding 25% hydrogen into the reactive gases would reduce the compressive stress. [29][30][31][32] Combining with a nanocrystalline diamond (NCD) as the gradient layer from Si substrate, 3-µm-thick c-BN films have been deposited by an unbalanced magnetron sputtering method.…”

Section: Introductionmentioning

confidence: 99%

Thick c-BN films deposited by radio frequency magnetron sputtering in argon/nitrogen gas mixture with additional hydrogen gas

et al. 2016

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The excellent physical and chemical properties of cubic boron nitride (c-BN) film make it a promising candidate for various industry applications. However, the c-BN film thickness restricts its practical applications in many cases. Thus, it is indispensable to develop an economic, simple and environment-friend way to synthesize high-quality thick, stable c-BN films. High-cubic-content BN films are prepared on silicon (100) substrates by radio frequency (RF) magnetron sputtering from an h-BN target at low substrate temperature. Adhesions of the c-BN films are greatly improved by adding hydrogen to the argon/nitrogen gas mixture, allowing the deposition of a film up to 5-µm thick. The compositions and the microstructure morphologies of the c-BN films grown at different substrate temperatures are systematically investigated with respect to the ratio of H 2 gas content to total working gas. In addition, a primary mechanism for the deposition of thick c-BN film is proposed.

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“…During the past decades, a couple of techniques have been proposed in order to reduce the high stress and improve the adhesion between the c-BN film and the substrates. These techniques include the high temperature deposition, [9] two-stage deposition process, [10] and the addition of a third element such as a small amount of oxygen, [11] hydrogen, [7] and silicon. [10] Besides, various gradient interlayers have been used to improve the film-substrate adhesion.…”

Section: Introductionmentioning

confidence: 99%

“…These techniques include the high temperature deposition, [9] two-stage deposition process, [10] and the addition of a third element such as a small amount of oxygen, [11] hydrogen, [7] and silicon. [10] Besides, various gradient interlayers have been used to improve the film-substrate adhesion. These interlayers include a hexagonal boron nitride (h-BN) buffer layer, [12] a BN x gradient layer, [13] the ternary B-C-N buffer layers, etc.…”

Section: Introductionmentioning

confidence: 99%

“…These interlayers include a hexagonal boron nitride (h-BN) buffer layer, [12] a BN x gradient layer, [13] the ternary B-C-N buffer layers, etc. [7,14] Fan et al [10] have made a comparison among several stress relief methods for c-BN films deposited by the ion beam assisted deposition technique. It is shown that the combination of the addition of Si with the two-stage deposition process is more favorable for not only reducing the stress but also improving the c-BN crystallinity.…”

Section: Introductionmentioning

confidence: 99%

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Preparation and characterization of thick cubic boron nitride films

Ming-E¹,

Ma²,

Chen³

et al. 2014

Chinese Phys. B

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Comparison and combination of several stress relief methods for cubic boron nitride films deposited by ion beam assisted deposition

Cited by 11 publications

References 35 publications

Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering

Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering

Thick c-BN films deposited by radio frequency magnetron sputtering in argon/nitrogen gas mixture with additional hydrogen gas

Preparation and characterization of thick cubic boron nitride films

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