Comparing metal oxide thin films as transparent p-type conductive electrodes

Guillén, C.; Herrero, J.

doi:10.1088/2053-1591/ab600e

Cited by 11 publications

(11 citation statements)

References 44 publications

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“…The average crystalline sizes are estimated by Scherrer’s equation . The introduction of Al 2 O 3 yields a bigger crystallite size (∼4.63 nm) than that on bare p -Si (∼3.18 nm), which may contribute to a better conductivity because of the reduced grain boundary scattering. − …”

Section: Resultsmentioning

confidence: 99%

Interfacial Engineering of Cu₂O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al₂O₃ Passivation Layer

Zhou

et al. 2021

ACS Appl. Mater. Interfaces

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Passivating contacts that simultaneously promote carrier selectivity and suppress surface recombination are considered as a promising trend in the crystalline silicon (c-Si) photovoltaic industry. In this work, efficient p-type c-Si (p-Si) solar cells with cuprous oxide (Cu 2 O) hole-selective contacts are demonstrated. The direct p-Si/Cu 2 O contact leads to a substoichiometric SiO x interlayer and diffusion of Cu into the silicon substrate, which would generate a deep-level impurity behaving as carrier recombination centers. An Al 2 O 3 layer is subsequently employed at the p-Si/Cu 2 O interface, which not only serves as a passivating and tunneling layer but also suppresses the redox reaction and Cu diffusion at the Si/Cu 2 O interface. In conjunction with the high work function of Au and the superior optical property of Ag, a power conversion efficiency up to 19.71% is achieved with a p-Si/Al 2 O 3 /Cu 2 O/Au/Ag rear contact. This work provides a strategy for reducing interfacial defects and lowering energy barrier height in passivating contact solar cells.

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Section: Resultsmentioning

confidence: 99%

Interfacial Engineering of Cu₂O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al₂O₃ Passivation Layer

Zhou

et al. 2021

ACS Appl. Mater. Interfaces

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“…They reported TCOs with conductivities of up to 1.7 × 10 −2 S/cm and average transmittances of about 70%. 46,47 In this work, we follow a strategy similar to those reported by Fortunato 44,45 and Guilleń. 46,47 We used DC sputtering to grow ultra-pure copper thin films (99.9995%, known as 5N5) on the surface of fused silica and corning glass substrates.…”

Section: Introductionmentioning

confidence: 99%

“…46,47 In this work, we follow a strategy similar to those reported by Fortunato 44,45 and Guilleń. 46,47 We used DC sputtering to grow ultra-pure copper thin films (99.9995%, known as 5N5) on the surface of fused silica and corning glass substrates. Subsequently, we carried out two postdeposition thermal treatments to oxidize the thin copper films in a controlled manner.…”

Section: Introductionmentioning

confidence: 99%

“…In 2019, Guillén and Herrero proved that, by applying controlled annealing, it is possible to achieve Cu 2 O p-type TCOs with acceptable FOMs, if one is willing to pay the price of a slight reduction in transmittance in exchange for a considerable increase in conductivity. They reported TCOs with conductivities of up to 1.7 × 10 –2 S/cm and average transmittances of about 70%. , …”

Section: Introductionmentioning

confidence: 99%

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Design, Growth, and Characterization of Crystalline Copper Oxide p-Type Transparent Semiconductive Thin Films with Figures of Merit Suitable for Their Incorporation into Translucent Devices

Valle

Garrido

Alonso-Huitrón

et al. 2022

Crystal Growth & Design

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The development of high-performance p-type transparent conductive oxides (TCOs) is a scientific challenge. Cupric oxide (CuO) and cuprous oxide (Cu 2 O) are attractive candidates for manufacturing p-type TCOs due to their optoelectronic properties. However, tailoring the copper oxide optical absorption and sheet resistance using scalable and simple synthesis methods is not easy. This work presents a straightforward and highly reproducible methodology based on DC sputtering plus thermal treatments to manufacture copper oxide p-type TCOs with optimal figures of merit. We demonstrate that a low-temperature longtime annealing is capable of changing the conductivity and average transmittance of a determined copper oxide TCO. Our proposed long thermal treatment produces a decrease in the TCO average transmittance from 82 to 67%, but, in return, it generates an increment in the conductivity of 3 orders of magnitude from 2.5 × 10 −5 S/cm up to 0.048 S/cm. We estimate that these p-type TCOs could be used to build diverse translucent experimental devices where a p−n heterojunction is required.

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“…Reactive sputtering methods are proven effective in obtaining NiO thin films with acceptor defects controlled by the oxygen partial pressure. [ 13,24,25 ] For this work, NiO thin films were deposited on unheated glass substrates by reactive DC sputtering, changing the oxygen‐to‐argon partial pressure ratio ( O pp ) over a wide range. The structural, morphological, optical and electrical properties of the sputtered films are comparatively analyzed as a function of the O pp , both as‐grown and after heating in air at 400 °C.…”

Section: Introductionmentioning

confidence: 99%

Influence of Acceptor Defects on the Structural, Optical and Electrical Properties of Sputtered NiO Thin Films

Guillén

Herrero

2021

Physica Status Solidi (a)

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NiO thin films have many applications due to the versatility of their optical and electrical characteristics, which can be controlled by the deposition parameters and/or subsequent heating. To achieve proper control, understanding their behavior, it is necessary to establish the influence of acceptor defects on the electronic characteristics of the films in relation to the preparation procedure. For this purpose, polycrystalline NiO thin films are grown by reactive DC sputtering on unheated glass substrates, with different acceptor defects depending on the oxygen partial pressure in the sputtering gas mixture. Their structural, morphological, optical, and electrical properties are analyzed comparatively in the as‐grown conditions and after heating in air at 400 °C. The results indicate that nickel vacancies along with hole carriers are effectively increased in films prepared at high oxygen ratios, increasing the electrical conductivity and the optical absorption at low energies, while distorting the crystalline lattice and decreasing the mean crystallite size. The heat treatment improves the crystallinity, bringing the different samples toward an equilibrium state that equates their optical and electrical characteristics. The intrinsic equilibrium constant is in the order K i ≈ 1022 cm−6, whereas the hole effective mass is found dependent on the carrier concentration.

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Comparing metal oxide thin films as transparent p-type conductive electrodes

Cited by 11 publications

References 44 publications

Interfacial Engineering of Cu₂O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al₂O₃ Passivation Layer

Interfacial Engineering of Cu₂O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al₂O₃ Passivation Layer

Design, Growth, and Characterization of Crystalline Copper Oxide p-Type Transparent Semiconductive Thin Films with Figures of Merit Suitable for Their Incorporation into Translucent Devices

Influence of Acceptor Defects on the Structural, Optical and Electrical Properties of Sputtered NiO Thin Films

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Comparing metal oxide thin films as transparent p-type conductive electrodes

Cited by 11 publications

References 44 publications

Interfacial Engineering of Cu2O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al2O3 Passivation Layer

Interfacial Engineering of Cu2O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al2O3 Passivation Layer

Design, Growth, and Characterization of Crystalline Copper Oxide p-Type Transparent Semiconductive Thin Films with Figures of Merit Suitable for Their Incorporation into Translucent Devices

Influence of Acceptor Defects on the Structural, Optical and Electrical Properties of Sputtered NiO Thin Films

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Interfacial Engineering of Cu₂O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al₂O₃ Passivation Layer

Interfacial Engineering of Cu₂O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al₂O₃ Passivation Layer