Comparing different bulk radiation damage models in TCAD simulations of small-pitch 3D Si sensors

Boughedda, Abderrezak; Lakhdara, Maya; Latreche, Saïda; Mendicino, R.; Betta, G.-F. Dalla

doi:10.1088/1748-0221/16/10/c10006

Cited by 4 publications

(4 citation statements)

References 16 publications

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“…The Perugia model predicts the magnitude of the leakage current and of the breakdown voltage, but the shape of the I-V curve is different from the measured ones. In particular, a plateau in the I-V curve is soon reached due to the fact that the model underestimates the full depletion voltage, as was also found in a previous study [23]. Moreover, an abrupt increase in the current is observed at breakdown, whereas the measured curves exhibit a smooth rise.…”

Section: Combined Effectssupporting

confidence: 78%

TCAD Analysis of Leakage Current and Breakdown Voltage in Small Pitch 3D Pixel Sensors

Boughedda

Sultan

et al. 2023

Sensors

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Small-pitch 3D pixel sensors have been developed to equip the innermost layers of the ATLAS and CMS tracker upgrades at the High Luminosity LHC. They feature 50 × 50 and 25 × 100 μm2 geometries and are fabricated on p-type Si–Si Direct Wafer Bonded substrates of 150 μm active thickness with a single-sided process. Due to the short inter-electrode distance, charge trapping effects are strongly mitigated, making these sensors extremely radiation hard. Results from beam test measurements of 3D pixel modules irradiated at large fluences (1016neq/cm2) indeed demonstrated high efficiency at maximum bias voltages of the order of 150 V. However, the downscaled sensor structure also lends itself to high electric fields as the bias voltage is increased, meaning that premature electrical breakdown due to impact ionization is a concern. In this study, TCAD simulations incorporating advanced surface and bulk damage models are used to investigate the leakage current and breakdown behavior of these sensors. Simulations are compared with measured characteristics of 3D diodes irradiated with neutrons at fluences up to 1.5 × 1016neq/cm2. The dependence of the breakdown voltage on geometrical parameters (e.g., the n+ column radius and the gap between the n+ column tip and the highly doped p++ handle wafer) is also discussed for optimization purposes.

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Section: Combined Effectssupporting

confidence: 78%

TCAD Analysis of Leakage Current and Breakdown Voltage in Small Pitch 3D Pixel Sensors

Boughedda

Sultan

et al. 2023

Sensors

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“…After irradiation up to 2 × 10 16 n eq /cm 2 , the proposed design is comparable to the existing one in terms of signal efficiency and superior to 3D pixels with columnar electrodes of similar inter-electrode distance [21]. Moreover, the electric field non-uniformity also impacts on the signal efficiency at high voltage: in particular, charge multiplication effects are position dependent and actually stronger in the boundary region between adjacent pixels.…”

Section: Discussionmentioning

confidence: 79%

“…This model was initially validated for a temperature range from −38.1 °C to −31.1 (here we use −37.9 °C) up to a radiation fluence of 8 × 10 15 n eq /cm 2 . However, we have previously demonstrated that simulation results in terms of signal efficiency (i.e., the ratio of the charge signal amplitude after irradiation and before irradiation) are accurate up to 2 × 10 16 n eq /cm 2 [21], so the model is here used up to this higher limit.…”

Section: Simulation Approachmentioning

confidence: 99%

A Modified 3D-Trench Pixel Detector: Proof of Concept by TCAD Simulations

et al. 2022

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A design modification to an existing 3D-trenched pixel detector is proposed, aimed at an improved fabrication yield. The device concept is studied and its performance is evaluated by TCAD simulations, in comparison to the existing one. Although the modified design features a less uniform electric field distribution, it is still expected to yield a very good timing performance and high radiation tolerance, also exploiting charge multiplication effects.

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“…The energy resolution of an SSBD device is closely related to charge collection efficiency and leakage current. To reduce the leakage current, many works to have attempted to modify the metal-semiconductor interface and enhance the Schottky barrier height [5][6][7]. For excellent detection efficiency, the detectors should operate at a high electric field or reduce the thickness of substrate.…”

Section: Introductionmentioning

confidence: 99%

Simulation of Silicon Surface Barrier Detector with PN Junction Guard Rings to Improve the Breakdown Voltage

Wang

Jia

et al. 2022

Micromachines

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Silicon surface barrier detectors (SSBDs) are normally used to detect high−energy particles due to their excellent properties. For better charge collection efficiency (CCE), the SSBD device should be operated at higher reverse voltages, but this can lead to device breakdown. Therefore, we used a PN junction as a guard ring to increase the breakdown voltage of the SSBD. The structures of two SSBD devices are drawn and simulated in this work. Compared with a conventional SSBD (c−SSBD), the use of a PN junction as a guard ring for an SSBD (Hybrid−SSBD) achieves higher breakdown voltages, of over 1500 V under reverse bias. This means that Hybrid−SSBD devices can operate at higher reverse voltages for better charge collection efficiency (CCE) to detect high−energy particles. Then, we simulated the different structure parameters of the Hybrid−SSBD guard rings. Among them, the doping depth and gap width of the guard ring (between the innermost guard ring and the active area) have a greater impact on the breakdown voltage. Finally, for Hybrid−SSBD devices, the optimal characteristics of the guard ring were 1 × 1019 cm−3 doping concentration, 1 μm doping depth, and innermost guard ring width and gap width of 5 μm and 3 μm, respectively.

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Comparing different bulk radiation damage models in TCAD simulations of small-pitch 3D Si sensors

Cited by 4 publications

References 16 publications

TCAD Analysis of Leakage Current and Breakdown Voltage in Small Pitch 3D Pixel Sensors

TCAD Analysis of Leakage Current and Breakdown Voltage in Small Pitch 3D Pixel Sensors

A Modified 3D-Trench Pixel Detector: Proof of Concept by TCAD Simulations

Simulation of Silicon Surface Barrier Detector with PN Junction Guard Rings to Improve the Breakdown Voltage

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