Comparative Study of Variations in Gate Oxide Material of a Novel Underlap DG MOS-HEMT for Analog/RF and High Power Applications

Mondal, Arnab; Roy, Akash; Mitra, Rajrup; Kundu, Atanu

doi:10.1007/s12633-019-00316-0

Cited by 23 publications

(4 citation statements)

References 21 publications

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“…Silicon Dioxide (SiO 2 ) 28 3.9 Aluminum Oxide (Al 2 O 3 ) 14 9 Gadolinium Oxide (Gd 2 O 3 ) 27 16 Hafnium Oxide (HfO 2 ) 20 25 Drain current sensitivity.-To find the effect of neutral and charged biomolecules on the drain current, the device output characteristics is obtained for = V 0 ds to 3 V, and for the sensitivity analysis output characteristics for Vgs = −1 V, 0 V, and 1 V is used. The output characteristics for neutral biomolecule in the cavity are presented in Fig.…”

Section: Name Of Gate Dielectric Dielectric Constantmentioning

confidence: 99%

Sensitivity Analysis of Al_0.3Ga_0.7N/GaN Dielectric Modulated MOSHEMT Biosensor

Pandiaraj

Dastidar

Patra

et al. 2023

ECS J. Solid State Sci. Technol.

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Emerging and newly proposed devices integrate various materials at different scales (nano to submicron), revealing sensor response. Prefab simulation is in great demand to elucidate fundamental biosensor phenomena based on transistors. Numerous high electron mobility transistor (HEMT)-based biosensors have been developed, however metal oxide semiconductor HEMT (MOSHEMT) deserves to be further investigated. Sensitivity analysis with neutral and charged biomolecules was carried out using single gate high-κ dielectric MOSHEMT through computer aided design simulation. Device performance was evaluated through shift (sensing action) of device parameters like two-dimensional electron gas, on-current, transconductance, drain current, and output conductance due to immobilization of biomolecules in cavity created under gate. For neutral biomolecule (κ=8), fluctuation in on-current, transconductance, drain current, and output conductance is determined to be 330.3 μA/μm,102.0 μS/μm,319.0μA/μm,and 534.9 μS/μm, respectively. Positively charged biomolecules were more sensitive to device than negatively charged ones. Analysis was done on response to the fill rates of the biomolecules in the cavity. For vertical, horizontal, and tapered profiles, the transconductance sensitivities are 0.65, 0.17, and 0.32 and drain current sensitivities are 0.25, 0.16, and 0.27 at lowest fill (25%). Therefore, AlGaN/ GaN dielectric modulated MOSHEMT assures that the device can be used in sensitive intelligent biomedical applications.

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Section: Name Of Gate Dielectric Dielectric Constantmentioning

confidence: 99%

Sensitivity Analysis of Al_0.3Ga_0.7N/GaN Dielectric Modulated MOSHEMT Biosensor

Pandiaraj

Dastidar

Patra

et al. 2023

ECS J. Solid State Sci. Technol.

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“…To reduce gate leakage current and enhance performance, a MOS (Metal Oxide Semiconductor) HEMT heterostructure is employed by introducing an oxide layer at the intersection of the gate electrode and AlGaN barrier. Various gate oxide materials, such as TiO2, HfO 2 , Al 2 O 3 , SiO 2 , and Si 3 N 4 , are commonly used in MOSHEMT transistors [4][5][6][7]. Conventionally, GaN-based HEMTs operate in a depletion mode (normally-on operation) since the 2DEG is present at the heterointerface even without gate polarization.…”

Section: Introductionmentioning

confidence: 99%

Numerical study of T-Gate AlGaN/AlInGaN/GaN MOSHEMT with Single and Double Barrier for THz Frequency Applications

Noual,

Zitouni,

Touati

et al. 2023

East Eur. J. Phys.

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This paper presents a comprehensive investigation into the DC analog and AC microwave performance of a state-of-the-art T-gate double barrier AlGaN/AlInGaN/GaN MOSHEMT (Metal Oxide Semiconductor High Electron Mobility Transistor) implemented on a 4H-SiC substrate. The study involves meticulous numerical simulations and an extensive comparison with a single barrier design, utilizing the TCAD-Silvaco software. The observed disparity in performance can be attributed to the utilization of double barrier technology, which enhances electron confinement and current density by augmenting the polarization-induced charge during high-frequency operations. Remarkably, when compared to the single barrier design, the double barrier MOSHEMT exhibits a notable 15% increase in drain current, a 5% increase in transconductance, and an elevated breakdown voltage (VBR) of 140 V in E-mode operation. Furthermore, the radio frequency analysis of the double barrier device showcases exceptional performance, setting new records with a maximum oscillation frequency (fmax) of 1.148 THz and a gain cutoff frequency (ft) of 891 GHz. These impressive results obtained through deck-simulation affirm the immense potential of the proposed double barrier AlGaN/AlInGaN/GaN MOSHEMT for future applications in high-power and terahertz frequency domains.

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“…The application of oxides as insulators such as SiO 2 [10,11], SiON [12], Al 2 O 3 [13], HfO 2 [14] and insulator stacks such as LaAlO 3 /SiO 2 [15] as both gate insulator and passivation layers has been widely adopted. However, oxidebased insulators tend to form Ga-O bonds during deposition, which can easily lead to current collapse.…”

Section: Introductionmentioning

confidence: 99%

Decreased trap density and lower current collapse in AlGaN/GaN HEMTs by adding a magnetron-sputtered AlN gate

Jia¹,

Zhang²,

Wang³

et al. 2022

J. Phys. D: Appl. Phys.

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In this paper, AlN films grown by magnetron sputtering method have been proposed as the gate insulator layer of AlGaN/GaN high-electron-mobility-transistors (HEMTs) to decrease gate leakage current and suppress the interface trap. The effect of the temperature of substrate on the quality of AlN films have been investigated. By inserting the thin AlN film (35 nm) as a gate insulator layer, the on-state resistance of AlGaN/GaN HEMTs decrease from 11.1 Ω·mm to 10.3 Ω·mm @Vg = 0 V, the current collapse decreases from 16.6% to 3.2%, the gate leakage can be reduced from 1.2×10-1 A/mm to 4.4×10-6 A/mm @Vg = 2 V by five orders of magnitude, and the fast interface states disappear and the normal trap density decreases from 0.96-1.3×1013 cm-2eV-1 to 1.3-3.4×1012 cm-2eV-1, proving that magnetron-sputtered AlN is an effective way to improve the performance of GaN HEMTs.

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Comparative Study of Variations in Gate Oxide Material of a Novel Underlap DG MOS-HEMT for Analog/RF and High Power Applications

Cited by 23 publications

References 21 publications

Sensitivity Analysis of Al_0.3Ga_0.7N/GaN Dielectric Modulated MOSHEMT Biosensor

Sensitivity Analysis of Al_0.3Ga_0.7N/GaN Dielectric Modulated MOSHEMT Biosensor

Numerical study of T-Gate AlGaN/AlInGaN/GaN MOSHEMT with Single and Double Barrier for THz Frequency Applications

Decreased trap density and lower current collapse in AlGaN/GaN HEMTs by adding a magnetron-sputtered AlN gate

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Comparative Study of Variations in Gate Oxide Material of a Novel Underlap DG MOS-HEMT for Analog/RF and High Power Applications

Cited by 23 publications

References 21 publications

Sensitivity Analysis of Al0.3Ga0.7N/GaN Dielectric Modulated MOSHEMT Biosensor

Sensitivity Analysis of Al0.3Ga0.7N/GaN Dielectric Modulated MOSHEMT Biosensor

Numerical study of T-Gate AlGaN/AlInGaN/GaN MOSHEMT with Single and Double Barrier for THz Frequency Applications

Decreased trap density and lower current collapse in AlGaN/GaN HEMTs by adding a magnetron-sputtered AlN gate

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Sensitivity Analysis of Al_0.3Ga_0.7N/GaN Dielectric Modulated MOSHEMT Biosensor

Sensitivity Analysis of Al_0.3Ga_0.7N/GaN Dielectric Modulated MOSHEMT Biosensor