Comparative study of structural and morphological properties of nanostructured CuIn<sub>2n+1</sub>S<sub>3n+2</sub>(n = 0, 1 and 2) thin films produced by oblique angle deposition

Sinaoui, A.; Khémiri, N.; Chaffar-Akkari, Ferid; Gallas, Bruno; Kanzari, M.

doi:10.1051/epjap/2013130366

Cited by 5 publications

(1 citation statement)

References 32 publications

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“…As shown in Figure , all of the samples demonstrate the main diffraction peaks of CuIn(Ga)S 2 and Mo. Samples A, B, and C show the coexistence of In-rich secondary phases CuIn 3 S 5 or CuIn 5 S 8 and InGaS 2 (JCPDS no. 98-065-5893), respectively.…”

Section: Resultsmentioning

confidence: 95%

11.6% Efficient Pure Sulfide Cu(In,Ga)S₂ Solar Cell through a Cu-Deficient and KCN-Free Process

Yan

et al. 2020

ACS Appl. Energy Mater.

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Pure sulfide chalcopyrite Cu(In,Ga)S2 (CIGS) is a promising large-band-gap, light-absorbing material for a single-junction cell or the upper cell of tandem solar cells. Current processes for producing such large-band-gap CIGS cells of over 10% efficiency involve use of either toxic cyanide solutions for Cu-rich processes or hazardous H2S gas during sulfurization for Cu-deficient processes. Herein, we report the fabrication of an over 11% efficient CIGS solar cell by a Cu-deficient and cyanide-free process using sulfur pellets for sulfurization. The Cu content (Cu/(In+Ga)), as one of the most critical factors for Cu-deficient processes, has been carefully adjusted from 0.90 to 0.99 and the effects of Cu content on the quality of the film and on device performance are compared. CIGS with a lower Cu content shows In-rich secondary phases, a rough surface and associated low PL yield, and a short minority carrier lifetime. The sample with a Cu content of Cu/(In+Ga) = 0.96 seems to be the optimal content in this batch; it demonstrates lower nonradiative recombination with an effective minority lifetime of up to 1.28 ns. By composition optimization, CIGS with 11.6% efficiency and 827 mV open-circuit voltage has been achieved, showing excellent potential from this cyanide/H2S-free process.

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Section: Resultsmentioning

confidence: 95%

11.6% Efficient Pure Sulfide Cu(In,Ga)S₂ Solar Cell through a Cu-Deficient and KCN-Free Process

Yan

et al. 2020

ACS Appl. Energy Mater.

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Investigation on the AC and DC electrical conductivity of Sn3Sb2S6 thin films prepared by glancing angle deposition

Larbi

Trabelsi

Dahman

et al. 2017

J Mater Sci: Mater Electron

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Optical and electrical anisotropies in Cu2ZnSnS4 and Cu2MgSnS4 thin films deposited by thermal evaporation at obliquely incident angle

Khebir,

Bousselmi,

Chaffar Akkari

et al. 2023

J Mater Sci: Mater Electron

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Comparative study of structural and morphological properties of nanostructured CuIn_2n+1S_3n+2(n = 0, 1 and 2) thin films produced by oblique angle deposition

Cited by 5 publications

References 32 publications

11.6% Efficient Pure Sulfide Cu(In,Ga)S₂ Solar Cell through a Cu-Deficient and KCN-Free Process

11.6% Efficient Pure Sulfide Cu(In,Ga)S₂ Solar Cell through a Cu-Deficient and KCN-Free Process

Investigation on the AC and DC electrical conductivity of Sn3Sb2S6 thin films prepared by glancing angle deposition

Optical and electrical anisotropies in Cu2ZnSnS4 and Cu2MgSnS4 thin films deposited by thermal evaporation at obliquely incident angle

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Comparative study of structural and morphological properties of nanostructured CuIn2n+1S3n+2(n = 0, 1 and 2) thin films produced by oblique angle deposition

Cited by 5 publications

References 32 publications

11.6% Efficient Pure Sulfide Cu(In,Ga)S2 Solar Cell through a Cu-Deficient and KCN-Free Process

11.6% Efficient Pure Sulfide Cu(In,Ga)S2 Solar Cell through a Cu-Deficient and KCN-Free Process

Investigation on the AC and DC electrical conductivity of Sn3Sb2S6 thin films prepared by glancing angle deposition

Optical and electrical anisotropies in Cu2ZnSnS4 and Cu2MgSnS4 thin films deposited by thermal evaporation at obliquely incident angle

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Product

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Comparative study of structural and morphological properties of nanostructured CuIn_2n+1S_3n+2(n = 0, 1 and 2) thin films produced by oblique angle deposition

11.6% Efficient Pure Sulfide Cu(In,Ga)S₂ Solar Cell through a Cu-Deficient and KCN-Free Process

11.6% Efficient Pure Sulfide Cu(In,Ga)S₂ Solar Cell through a Cu-Deficient and KCN-Free Process