Comparative study of n-type AlGaN grown on sapphire by using a superlattice layer and a low-temperature AlN interlayer

Effect of growth temperature of initial AlN buffer on the structural and optical properties of Al-rich AlGaN

“…Furthermore, cracking in AlGaN grown on AlN buffer is suppressed because of in-plane compressive stress. Therefore, AlN buffer layers have been widely used for Al-rich AlGaN epilayers and various device structures, either by low temperature (LT) nucleation [7][8][9][10] or directly high-temperature (HT) growth [11][12][13][14]. However, there have been no detailed reports about the effect of initial AlN buffer, such as its growth temperature, on structural quality and optical property of high Al-content AlGaN epilayers.…”

Growth and characterization of c-plane AlGaN on γ-LiAlO2

“…Fig. 3 studies, the rocking curve FWHM of AlGaN grown on a sapphire substrate using LT-AlN nucleation layer usually ranges from 1000 to 2000 arcsec [15,16]. The crystal quality of AlGaN grown on LAO substrate thus obtained was much better than that grown on sapphire substrate.…”

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

“…This buffer was found to greatly enlarge the coherence lengths of mosaic blocks and reduce the TDD by two orders of magnitude in Al 0.2 Ga 0.8 N layers. Xi et al [97] conducted a comparative study of n-type AlGaN grown on sapphire by using a superlattice buffer and a LT-AlN interlayer. Improved electrical properties with higher electron concentration and mobility and surface morphologies, lacking hexagonal hillocks on the Al 0.3 Ga 0.7 N surface, was achieved in samples with AlN/AlGaN or AlGaN/AlGaN superlattice buffer, compared with samples with only a LT-AlN interlayer buffer [97].…”