Comparative Study of Lead-Free Perovskite Solar Cells Using Different Hole Transporter Materials

Coulibaly, None Abou Bakary; Oyedele, Sampson Oladapo; Kre, N’Guessan Raymond; Aka, Boko

doi:10.4236/mnsms.2019.94006

Cited by 36 publications

(28 citation statements)

References 11 publications

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“…Table1: main physical properties for various layers of lead free perovskite devices 14,18,[20][21][22][23][24][25][26][27] .…”

Section: Scaps-1d Simulation Methodologymentioning

confidence: 99%

Comparative Performance Analysis of Lead-Free Perovskites Solar Cells by Numerical Simulation

Srivastava¹,

Singh²,

Kumar³

et al. 2021

Preprint

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Research of lead-free perovskite based solar cells has gained speedy and growing attention with urgent intent to eliminate toxic lead in perovskite materials. The main purpose of this work is to supplement the research progress with comparative analysis of different lead-free perovskite based solar cells by numerical simulation method using solar cell capacitance simulator (SCAPS-1D) software. In this work, the device simulation is carried out in the n-i-p configuration of FTO/[6,6]-Phenyl-C61-butyric acidmethyl ester (PCBM) /Perovskite layer/ Poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine(PTAA)/Au using six different lead-free perovskite materials. The impact of different perovskite materials layers including hole and electron transport layer thickness, doping concentration on solar cell performances has thoroughly been investigated and optimized. CsSnI3 based perovskite solar cell shows the highest power conversion efficiency of 28.97 % among all the lead-free perovskite based devices. This clearly indicates that it’s possible to achieve high-performance lead-free perovskite solar cells experimentally at par with lead based perovskite solar cells in future research.

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“…Table1: main physical properties for various layers of lead free perovskite devices 14,18,[20][21][22][23][24][25][26][27] .…”

Section: Scaps-1d Simulation Methodologymentioning

confidence: 99%

Comparative Performance Analysis of Lead-Free Perovskites Solar Cells by Numerical Simulation

Srivastava¹,

Singh²,

Kumar³

et al. 2021

Preprint

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“…Right and left contact work function are 4.8 eV (ITO) and 5.1 eV (Au), respectively. Pre-factor for Cs 2 AgBiBr 6 is set to 2.62×10 4 cm −1 eV −1/2 to acquire absorption coefficient, , as computed by = (ℎ − ) The material parameters for the simulation are carefully selected from reported works (Wu et al 2018;Ganvir 2016;Xu et al 2019;Zhao et al 2019;Minemoto et al 2019;Coulibaly et al 2019;Minbashi et al 2018), as summarized in Table 1.…”

Section: Device Structure and Simulation Parametersmentioning

confidence: 99%

Numerical simulation of inorganic Cs2AgBiBr6 as a lead-free perovskite using device simulation SCAPS-1D

2021

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Double perovskite, Cs 2 AgBiBr 6 , is introduced as a lead-free perovskite solar cell. Device modeling of Cs 2 AgBiBr 6 (DP) was accomplished to obtain the optimum parameters using the Solar Cell Capacitance Simulator (SCAPS). Two devices with two different hole transport layers (HTLs) were investigated, including P 3 HT and Cu 2 O. For both devices with different HTLs, an optimal thicknesses of 1200 nm and defect densities of 1.0 ×10 14 cm -3 for DP layer were attained. For both HTLs, conduction band offset, CBO, is -0.21 eV and valence band offset, VBO, is +0.16 eV. For shallow acceptor doping concentration of P 3 HT and Cu 2 O, the values of 5.0 × 10 19 and 5.0 × 10 17 cm −3 were obtained, respectively. As far as the shallow donor density of electron transport layers (ETLs) is concerned, for both cases, the optimum value of 5.0 × 10 19 cm -3 were achieved. For capture cross section, , , in absorber layer for both HTLs, the optimal value at , of 10 −20 cm 2 for , (defect density of DP) is 10 16 cm −3 , at , of 10 −19 cm 2 for , is 10 15 cm −3 , at , of 10 −18 cm 2 for , is 10 14 cm −3 , at , of 10 −17 cm 2 for , is 10 13 cm −3 , and at , of 10 −16 cm 2 for , is 10 12 cm −3 . For P 3 HT device, the interface defect density of P 3 HT/Cs 2 AgBiBr 6 is occurred at 1.0×10 14 cm -2 , and for Cs 2 AgBiBr 6 /SnO 2 is happened at 1.0×10 9 cm -2 . For Cu 2 O device, the interface defect density of Cu 2 O/ Cs 2 AgBiBr 6 is befallen at 1.0×10 13 cm -2 , and for Cs 2 AgBiBr 6 /SnO 2 is happened at 1.0×10 10 cm -2 . As for radiative recombination, for P 3 HT device, the optimal value is happened at 2.3×10 -13 cm 3 /s, however, for Cu 2 O device is occurred at 2.3×10 -12 cm 3 /s. Finally, for P 3 HT device, a maximum power conversion efficiency, PCE, of 11.69% (open-circuit voltage, V oc , of 2.02 V, short-circuit current density, J sc , of 6.39 mA/cm 2 , and fill-factor, FF, of 0.90 (90% )) were achieved, and for Cu 2 O device, a PCE of 11.32% (V oc of 1.97 V, J sc of 6.39 mA/cm 2 , and FF of 0.895 (89.5% )) were attained. This is the highest efficiency for Cs 2 AgBiBr 6 double perovskite solar cell which was achieved till now. Finally, our results are providing towards fabricating a lead-free and inorganic solar cell.Keywords Cs 2 AgBiBr 6 . Double perovskite solar cell. Lead-free perovskite. Conduction band offset (CBO). Valence band offset (VBO). SCAPS

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“…Right and left contact work function are 4.8 eV (ITO) and 5.1 eV (Au), respectively. Pre-factor 𝐴𝐴 𝛼𝛼 for Cs 2 AgBiBr 6 is set to 2.62×10 4 cm −1 eV −1/2 to acquire absorption coefficient, 𝛼𝛼, as computed by 𝛼𝛼 = 𝐴𝐴 𝛼𝛼 (ℎ𝜈𝜈 − 𝐸𝐸 𝑔𝑔 ) The material parameters for the simulation are carefully selected from reported works (Wu et al 2018;Ganvir 2016;Xu et al 2019;Zhao et al 2019;Minemoto et al 2019;Coulibaly et al 2019;Minbashi et al 2018), as summarized in Table 1.…”

Section: Device Structure and Simulation Parametersmentioning

confidence: 99%

Numerical simulation of inorganic Cs2AgBiBr6 as a lead-free perovskite using device simulation SCAPS-1D

Mohandes

Moradi

Nadgaran

2021

Preprint

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Comparative Study of Lead-Free Perovskite Solar Cells Using Different Hole Transporter Materials

Cited by 36 publications

References 11 publications

Comparative Performance Analysis of Lead-Free Perovskites Solar Cells by Numerical Simulation

Comparative Performance Analysis of Lead-Free Perovskites Solar Cells by Numerical Simulation

Numerical simulation of inorganic Cs2AgBiBr6 as a lead-free perovskite using device simulation SCAPS-1D

Numerical simulation of inorganic Cs2AgBiBr6 as a lead-free perovskite using device simulation SCAPS-1D

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