2019 31st International Conference on Microelectronics (ICM) 2019
DOI: 10.1109/icm48031.2019.9021932
|View full text |Cite
|
Sign up to set email alerts
|

Comparative Study for Some Memristor models in Different Circuit Applications

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2022
2022
2022
2022

Publication Types

Select...
1
1

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(2 citation statements)
references
References 15 publications
0
2
0
Order By: Relevance
“…The authors suggested a non-linear dopant drift model as a relationship between the memristor's current and voltage (I-V) in [13]. To simulate the non-linearity, the drift velocity was expressed using a window function f(w) in [14]. In this study, the VTEAM model [15] was employed, and it was found to be superior to the other models tested.…”
Section: ░ 2 Memristormentioning
confidence: 99%
See 1 more Smart Citation
“…The authors suggested a non-linear dopant drift model as a relationship between the memristor's current and voltage (I-V) in [13]. To simulate the non-linearity, the drift velocity was expressed using a window function f(w) in [14]. In this study, the VTEAM model [15] was employed, and it was found to be superior to the other models tested.…”
Section: ░ 2 Memristormentioning
confidence: 99%
“…A decoder converts binary data from x input lines to up to 2x distinct output lines [14]. It acts as a converter, changing the xinput into 2x different output lines.…”
Section: Decodermentioning
confidence: 99%