Comparative study between electrical, optical and structural properties of annealed heavily carbon doped GaAs

Rebey, A.; Chine, Z.; Fathallah, W.; Jani, B. El; Goovaerts, E.; Laugt, S.

doi:10.1016/j.mejo.2004.07.012

Cited by 4 publications

(3 citation statements)

References 26 publications

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“…We assume that the substituted carbon in the gallium site (C Ga usually used to estimate the compensation) is the dominant cause of the compensation described by [12,13] …”

Section: Homoepitaxymentioning

confidence: 99%

High‐Resolution X‐Ray Diffraction of III–V Semiconductor Thin Films

Fitouri¹,

Habchi²,

Rebey³

2017

X-Ray Scattering

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In this chapter, we will address the structural characterization of III-V semiconductor thin films by means of HRXRD. We first give an overview on the basic experimental apparatus and theory element of this method. Subsequently, we treat several examples in order to determine the effect of doping, composition and strain on structural properties of crystal. Analysed layers were grown by metal organic vapour phase epitaxy (MOVPE). Films treated as examples are selected in order to bring the utility of characterization technique. Here, we investigate GaAs/GaAs(001), GaAs:C/GaAs(001), GaN/Si(1 11), GaN:Si/Al 2 O 3 (001), GaAsBi/GaAs(001) and InGaAs/GaAs(001) heterostructures by using different scans for studying numerous structural layers and substrate parameters. Different scan geometries, such as ω-scan, ω/2θ-scan and map cartography, are manipulated to determine tilt, deformation and dislocation density induced by mismatch between layer and substrate. This mismatch is originated from the difference between the chemical properties of two materials generated by doping or alloying. Such HRXRD measurements are explored through the angular spacing between peaks of the substrate and layer. The half of full width maximum (HFWM) of peak layer intensity is a crucial qualitative parameter giving information on defect density in the layer.

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“…We assume that the substituted carbon in the gallium site (C Ga usually used to estimate the compensation) is the dominant cause of the compensation described by [12,13] …”

Section: Homoepitaxymentioning

confidence: 99%

High‐Resolution X‐Ray Diffraction of III–V Semiconductor Thin Films

Fitouri¹,

Habchi²,

Rebey³

2017

X-Ray Scattering

View full text Add to dashboard Cite

show abstract

“…This is not incorrect, but corresponds to a reversed time dependence of the oscillating external electric field. Care must, however, be taken not to change the sign of one of the damping terms and not the other, as for example by Engelbrecht and Botha [4], Rebey et al [5], Morley et al [19] and Patrini et al [20]. Also note that Holm et al [16] define the complex refractive index as n À ik ¼ ffiffi e p , compared to Eq.…”

Section: Forms Of the Dielectric Functionmentioning

confidence: 99%

“…Although a wide variety of dielectric function models can be considered [1,2], the simple oscillator model has been used in one form or another by nearly every experimentalist for over a century to fit infrared reflectance or transmission spectra [3] and still finds application today [4,5]. As the classical form for dielectric response, this model commands attention despite its deficiencies.…”

Section: Introductionmentioning

confidence: 99%