Comparative studies on BN-coatings on SiC and Si3N4 nanowires

Abstract

Uniformly BN-coated silicon carbide nanowires have been synthesized via the vapor-liquid-solid growth mechanism. Nanoscale Ni-C grains were used as catalysts and a mixture of boron and silica was heated to simultaneously generate SiO and B 2 O 2 vapors. The uniform coating was explained based on the TEM observations. The fixed relative vapor concentrations absorbed by the catalyst droplets and the (111) facets at the outermost surface of the SiC nanowires are responsible for the uniform coating. The effect of the closely packed (111) plane, which exists on the surface of the nanowires, was studied for the tentative synthesis of BN-coated Si 3 N 4 nanowires. The BN coating on Si 3 N 4 nanowires is disordered due to the lack of a closely packed surface plane. When using a BN supported Ni catalyst, BN nanotubes and nano-bamboos, and crystalline straight or amorphous curved Si 3 N 4 nanowires without BN coating are formed.

Self-Assembly of Gold Nanoparticles at the Surface of Amine- and Thiol-Functionalized Boron Nitride Nanotubes

“…24,23 Characterization of the amine groups at the surface of the BNNTs was achieved using X-ray photoelectron spectroscopy (XPS). Figure 1 shows XPS results obtained for as-prepared pristine BNNTs and AF-BNNTs.…”

“…BNNTs were synthesized according to a previously reported procedure. 24 Preparation of Amine-Functionalized BNNTs (AF-BNNTs). Amine-functionalized BNNTs (AF-BNNTs) were prepared as described in detail elsewhere.…”

Aqueous Noncovalent Functionalization and Controlled Near-Surface Carbon Doping of Multiwalled Boron Nitride Nanotubes

“…9 A representative transmission electron microscopy (TEM) image of BNNTs is displayed in Figure 1b. By simple ultrasonication of BNNTs in an aqueous solution of PTAS followed by filtration, washing, redispersing, and dialysis to remove any unbound free PTAS molecules (see Supporting Information), we obtained the PTAS-functionalized BNNTs (denoted as PTASBNNTs hereafter).…”

A novel method for synthesis of α-Si3N4 nanowires by sol–gel route

“…Si 3 N 4 is also a wide-band-gap semiconductor used in the optical and electrical device industries [4]. However, Si 3 N 4 nanotubes and nanowires have recently attracted much attention because of their enhanced hardness associated with their unique optical and other mechanical properties [5][6][7] as compared with coarse-grained Si 3 N 4 ceramic materials. As a result, different physical and chemical routes have been proposed and developed for the synthesis of Si 3 N 4 nanowires.…”