Comparative studies between the growth characteristics of Bi2Te3 thin films deposited on SiO2, Si(100) and Si(111)

Ferhat, M.; Liautard, B.; Brun, G.; Tédenac, J. C.; Nouaoura, M.; Lassabatere, L.

doi:10.1016/0022-0248(96)00247-3

Cited by 44 publications

(20 citation statements)

References 11 publications

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“…The AFM characterizations have shown that the films obtained were stoichiometric and had good morphology [15,16]. The refractive index n and the extinction coefficient k were evaluated using the interference method, in the mid infrared spectral range.…”

Section: Resultsmentioning

confidence: 99%

“…The structural quality has been checked by X-ray diffraction measurements [15]. Intense and thin [001] peaks characteristic of Bi 2 Te 3 films are observed proving that the epilayers are well oriented.…”

Section: Methodsmentioning

confidence: 99%

“…Experimental procedures, such as substrate and source material preparations, have already been described in [15]. The thickness of the samples is determined from the growth parameters.…”

Section: Methodsmentioning

confidence: 99%

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Optical Properties of Bismuth Telluride Thin Films, Bi2Te3/Si(100) and Bi2Te3/SiO2/Si(100)

Kaddouri

Maurice

Gratens

et al. 1999

phys. stat. sol. (a)

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In this work, we have studied bismuth telluride (Bi2Te3) thin films on Si(100) and SiO2/Si(100) substrates grown by Hot Wall Epitaxy (HWE) technique. The morphology of the surface was controlled by Atomic Force Microscopy (AFM). Reflection and transmission experiments in the mid‐infrared (MIR) spectral range were performed at room temperature. We have deduced the frequency dependence of the absorption coefficient. The refractive index was determined in the mid‐infrared (MIR) spectral range for these samples and the energy band gap was evaluated.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Optical Properties of Bismuth Telluride Thin Films, Bi2Te3/Si(100) and Bi2Te3/SiO2/Si(100)

Kaddouri

Maurice

Gratens

et al. 1999

phys. stat. sol. (a)

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“…Hot wall epitaxy was employed previously for producing Bi 2 Se 3 and Bi 2 Te 3 films at low cost for thermoelectric applications. 26 The growth in hot wall epitaxy takes place under thermodynamical equilibrium conditions. 27 As demonstrated in Ref.…”

Section: Sample Preparationmentioning

confidence: 99%

Weak antilocalization and electron-electron interaction effects in Cu-doped Bi2Se3films

et al. 2012

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We investigate the low-temperature transport properties in Cu x Bi 2−x Se 3 films prepared by a hot-wall-epitaxy growth of Bi 2 Se 3 layers on Cu-deposited substrates. We observe a positive magnetoresistance due to the weak antilocalization effect and a classical magnetoresistance that exhibits a power-law dependence on the magnetic field. The resistance increases logarithmically with lowering temperature regardless of the strength of the magnetic field. The electron-electron interaction effect is thus evidenced to be strong. While the magnitude of the weak antilocalization effect is in reasonable agreement with theory, the correction to the conductivity due to the electron-electron interaction effect is unaccountably larger than the theoretical prediction. The discrepancy may indicate that the contribution from the bulk state is as large as that from the surface states, at least, for the interaction effect.

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“…However, easy crack formation due to the weak van der Waals force between the Te(1)-Te(1) layers and the poor mechanical strength of the materials usually makes its fabrication more difficult. 5,6 In addition, the low yield strength of the material also degrades the mechanical stability of devices in practical applications. Therefore, it is essential to improve its thermoelectric properties simultaneously with enhanced mechanical properties using new technology, which is of great significance for improvement of the efficiency of thermoelectric conversion systems and for the development of microthermoelectric devices.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Properties of Ag-Doped n-Type (Bi2−x Ag x Te3)0.96−(Bi2Se3)0.04 Pseudobinary Alloys

Zhang

et al. 2011

Journal of Elec Materi

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n-Type thermoelectric powders of (Bi 2Àx Ag x Te 3 ) 0.96 À(Bi 2 Se 3 ) 0.04 (0 £ x £ 0.05) have been synthesized by mechanical alloying and then consolidated by spark plasma sintering. The analysis results show that the grain size of pure Bi, Te, Ag, and Se powders is decreased to about 1 lm to 0.5 lm after they are mechanically alloyed for 2 h. The power factor of bulk material increases with increasing Ag-doping content, while the trend for the lattice thermal conductivity is the opposite. Bulk (Bi 0.99 Ag 0.04 ) 2 (Te 0.96 Se 0.04 ) 3 after milling for 12 h exhibits a higher power factor, lower thermal conductivity, and thus a higher ZT of 0.74 at 373 K.

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Comparative studies between the growth characteristics of Bi2Te3 thin films deposited on SiO2, Si(100) and Si(111)

Cited by 44 publications

References 11 publications

Optical Properties of Bismuth Telluride Thin Films, Bi2Te3/Si(100) and Bi2Te3/SiO2/Si(100)

Optical Properties of Bismuth Telluride Thin Films, Bi2Te3/Si(100) and Bi2Te3/SiO2/Si(100)

Weak antilocalization and electron-electron interaction effects in Cu-doped Bi2Se3films

Thermoelectric Properties of Ag-Doped n-Type (Bi2−x Ag x Te3)0.96−(Bi2Se3)0.04 Pseudobinary Alloys

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